Low-Temperature Baking Effect of the Radio-Frequency Nb_(3)Sn Thin Film Superconducting Cavity  

作　　者：Ziqin Yang Shichun Huang Yuan He Xiangyang Lu Hao Guo Chunlong Li Xiaofei Niu Pingran Xiong Yukun Song Andong Wu Bin Xie Zhiming You Qingwei Chu Teng Tan Feng Pan Ming Lu Didi Luo Junhui Zhang Shenghu Zhang Wenlong Zhan 杨自钦;皇世春;何源;鲁向阳;郭浩;李春龙;牛小飞;熊平然;宋玉堃;吴安东;谢斌;游志明;初青伟;谭腾;潘峰;路明;罗迪迪;张军辉;张生虎;詹文龙(Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China;State Key Laboratory of Nuclear Physics and Technology,Peking University,Beijing 100871,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China [2]State Key Laboratory of Nuclear Physics and Technology,Peking University,Beijing 100871,China [3]University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics Letters》2021年第9期43-47,共5页中国物理快报（英文版）

基　　金：Supported by the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2020410);the Major Research Plan of National Natural Science Foundation of China(Grant No.91426303);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB25000000);the National Postdoctoral Program for Innovative Talents(Grant No.BX201700257).

摘　　要：The Nb_(3)Sn thin film cavity,having the potential to be operated at a higher temperature and higher gradient compared to the cavity made from bulk niobium,is one of the most promising key technologies for the nextgeneration radio-frequency superconducting accelerators.In our work,several 1.3 GHz single-cell TESLA-shaped Nb_(3)Sn thin film cavities,coated by the vapor diffusion method,were tested at Peking University and Institute of Modern Physics,Chinese Academy of Sciences.It was observed that the performance of the Nb_(3)Sn thin film cavities in the tests without the slow cooling down procedure and the effective magnetic field shielding was significantly improved by using a low temperature baking at 100℃for 48 hours.Although the peak electric field of the cavity remained unchanged,the rapid drop of the unloaded Q value(Q0)with the increasing accelerating field(Q-slope)was effectively eliminated,resulting in an improvement of the Q0 in the intermediate field region by~8 times.Furthermore,under better test conditions with the shielded magnetic field less than 5 mG and the slow cooling down procedure in the temperature range of 25-15 K,the Q0 was still improved by about 20%.Our study shows that the low temperature baking can be an effective supplement to the effective post-treatment for the Nb_(3)Sn thin film cavity.

关 键 词：CAVITY film unchanged 

分 类 号：TL50[核科学技术—核技术及应用]