一种含有源巴伦CMOS双频低噪声放大器的设计  

A CMOS Dual-band Low Noise Amplifier Design with Source Barron

作　　者：熊荣 陈昌明[1] 李娜 李万里 XIONG Rong;CHEN Changming;LI Na;LI Wanli(College of Communication Engineering,Chengdu University of Information Technology,Chengdu 610225,China)

机构地区：[1]成都信息工程大学通信工程学院,四川成都610225

出　　处：《成都信息工程大学学报》2021年第4期396-399,共4页Journal of Chengdu University of Information Technology

摘　　要：设计了一种可用于北斗B1/B2频段带有源巴伦的可切换双通道CMOS低噪声放大器。为了实现不同频率的切换,使用开关管改变输入阻抗匹配。输出端采用一种有源巴伦技术,在降低芯片功耗和面积的同时将单端输入信号转变为差分输出信号。使用Cadence Spectre RF基于SMIC 0.13 μm 1P6M RF CMOS工艺下进行仿真。结果显示,在1.2 V工作电压下,当输入信号为1.56 GHz时,LNA的增益、噪声系数和偏置电流分别为19.77 dB、1.13 dB和1 mA;当输入信号为1.2 GHz时,LNA的增益、噪声系数和偏置电流分别为27.43 dB、2.11 dB和1 mA,功耗约为1.8 mW。A switchable dual-channel CMOS low noise amplifier with source Baron for Beidou B1/B2 frequency band is designed.In order to achieve different frequency switching,switch tube is used to change the input impedance matching.The output terminal adopts an active Barron technology to transform the single-terminal input signal into differential output signal while reducing the power and area of the chip.Cadence Spectre RF was used for simulation based on SMIC 0.13 um1 P6 M RF CMOS process.The results show that LNA gain,noise coefficient and bias current are 19.77 dB,1.13 dB and1 mA respectively when the input signal is 1.56 GHz at 1.2 V working voltage.At 1.2 GHz,LNA’s gain,noise coefficient and bias current are 27.43 dB,2.11 dB and 1 mA respectively,and its power consumption is about 1.8 mW.

关 键 词：CMOS 双通道 有源巴伦 低功耗 

分 类 号：TN722.3[电子电信—电路与系统]