高压IGBT芯片开关过程栅分布效应仿真研究  

Simulation and Analysis of Dynamic Process Distribution Effect of High Voltage IGBT

作　　者：孙琬茹 王耀华 刘江 高明超 李立 李翠 聂瑞芬 金锐 SUN Wanru;WANG Yaohua;LIU Jiang;GAO Mingchao;LI Li;LI Cui;NIE Ruifen;JIN Rui(Global Energy Interconnection Research Institute Co.,Ltd.,Beijing 102209,China)

机构地区：[1]全球能源互联网研究院有限公司,先进输电技术国家重点实验室,北京102209

出　　处：《机车电传动》2021年第5期53-57,共5页Electric Drive for Locomotives

基　　金：国家电网有限公司总部科技项目(5500-202058473A-0-0-00)。

摘　　要：高压IGBT在导通或关断时是先从栅焊盘处获得驱动信号,然后再依靠多晶硅层通向芯片的各个区域。由于多晶硅层形成的栅分布电阻效应使得芯片内元胞对栅驱动信号的反应时间不同,芯片内各个元胞不能同时开启或关断,因此IGBT芯片在开关过程中容易产生电流集中现象,尤其当芯片面积较大时,电流集中的现象尤为明显,由此引起芯片动态过程分布效应问题。文章围绕IGBT的电学和温度特性研究高压IGBT芯片动态过程分布,对IGBT芯片进行器件结构建模,搭建Spice电路构建带有栅极电阻和栅极分布电阻的IGBT模型,仿真分析IGBT芯片动态过程中电压、电流和功率的变化情况。采用ANSYS仿真软件构建IGBT热仿真模型,仿真分析动态过程分布中电流集中效应给器件表面温度分布带来的影响,为提高器件的电流和温度分布均匀性提供了重要的参考依据。When the IGBT is turned on or off, it first obtains the driving signal from the gate pad, and then relies on the polysilicon layer to reach various areas and corners of the chip. However, due to the distributed resistance effect of the gate formed by the polysilicon layer, each primary cell in the chip cannot be turned on or off at the same time. Therefore, there is a current concentration phenomenon in the dynamic process of the IGBT chip, especially when the chip area is large, the current concentration phenomenon is particularly obvious, which leads to the problem of the dynamic process distribution effect. Around the electrical and temperature characteristics of IGBT, the dynamic process distribution of high-voltage IGBT chip was studied, the device structure of IGBT chip was modeled, the IGBT model with grid resistance and grid distributed resistance with Spice circuit was built, and the changes of voltage, current and power in the dynamic process of IGBT chip were simulated and analyzed. The thermal simulation model of IGBT was constructed by using ANSYS simulation software, and the influence of current concentration effect on device surface temperature distribution in dynamic process distribution was simulated and analyzed, which provided an important reference basis for improving the uniformity of device current and temperature distribution.

关 键 词：IGBT 电流集中效应 栅极电阻 栅分布电阻 温度分布 

分 类 号：TN325.2[电子电信—物理电子学]