低阻硅TSV与铜填充TSV热力学特性对比分析  

Thermal-Mechanical Reliability Characterization of Low-Resistivity Silicon-TSVs(LRS-TSV)and Copper-Filled TSVs

作　　者：邓小英[1] 于思齐 王士伟[2] 谢奕 DENG Xiaoying;YU Siqi;WANG Shiwei;XIE Yi(School of Information and Electronics,Beijing Institute of Technology,Beijing 100081,China;School of Optoelectronics,Beijing Institute of Technology,Beijing 100081,China)

机构地区：[1]北京理工大学信息与电子学院,北京100081 [2]北京理工大学光电学院,北京100081

出　　处：《北京理工大学学报》2021年第10期1109-1113,共5页Transactions of Beijing Institute of Technology

基　　金：国家自然科研基金资助项目(61404008,61574016);111引智计划项目(B14010);北京理工大学基础研究基金项目(20130542015)。

摘　　要：对低阻硅TSV以及铜填充TSV的热力学性能通过有限元仿真的方法进行对比分析.低阻硅TSV在绝缘层上方以及低阻硅柱上方的铝层区域中凸起最为显著,且高度分别为82 nm和76 nm;铜填充TSV的凸起位置主要集中在通孔中心铜柱的上方,最大值为150 nm.应力方面,低阻硅TSV在绝缘层两侧的应力最大,且最大值为1005 MPa;铜填充TSV在中心铜柱外侧应力最大,且最大值为1227 MPa.另外,两种结构TSV的界面应力都在靠近TSV两端时最大.低阻硅TSV界面应力没有超过400 MPa,而铜填充TSV在靠近其两端时界面应力已经超过800 MPa.综上所述,相比于铜填充TSV,低阻硅TSV具有更高的热力学可靠性.The thermal mechanical reliability of low resistivity silicon through silicon via(LRS-TSV)and copper-filled TSV was analyzed and compared based on finite element method(FEM).The results show that,the protrusion area of LRS-TSV emerges mainly upon polymer insulation and the aluminum layer above the silicon pillar,the height is 82 nm and 76 nm respectively.The protrusion area of copper-filled TSV emerges mainly upon the copper layer above the copper pillar,the maximum value is 150 nm.The largest stress of the LRS-TSV emerges on both sides of the polymer insulation layer,the maximum value can reach up to 1005 MPa.And the largest stress of Copper-filled TSV emerges on the outside of the central copper pillar,the maximum value is 1227 MPa.In addition,the largest interfacial stress of the two types of TSV structure all appears at both ends near the TSV.The stress of the LRS-TSV can not exceed 400 MPa,while the stress of copper-filled TSV can exceed 800 MPa.Based on the above results,it is concluded that the LRS-TSV possesses higher thermal mechanical reliability than the copper-filled TSV.

关 键 词：低阻硅TSV 铜填充TSV 凸起 应力 热力学性能 

分 类 号：TN402[电子电信—微电子学与固体电子学]