SiGe HBT低温敏宽带低噪声放大器设计  

Design of SiGe HBT Low Temperature Sensitive Broadband Low Noise Amplifier

作　　者：魏正华 叶小兰 刘卫[1] 张玲玉 WEI Zhenghua;YE Xiaolan;LIU Wei;ZHANG Lingyu(School of Electronic and Information Engineering,Changsha Social Work College,Changsha 410000,China;Environmental Monitoring Department,Changsha Environmental Protection College,Changsha 410000,China)

机构地区：[1]长沙民政职业技术学院电子信息工程学院,湖南长沙410000 [2]长沙环境保护职业技术学院环境监测系,湖南长沙410000

出　　处：《东莞理工学院学报》2021年第5期25-30,共6页Journal of Dongguan University of Technology

基　　金：2019年度湖南省教育厅科学研究项目“SiGe HBT超宽带低噪声放大电路的温度特性研究与应用”(19C0109)阶段性研究成果。

摘　　要：采用两级锗硅异质结晶体管(SiGe HBT)低噪声放大芯片,通过ADS2015进行宽带电路匹配设计了一款频率覆盖超短波到L波段的宽带低噪声放大器(LNA)。仿真显示该LNA工作频率在0.07~2 GHz,增益Gain>30 dB,噪声系数NF<0.78,增益平坦度Gain Flatness<0.2 dB,输入输出回波损耗Return Loss<-10 dB。实测结果显示常温下该LNA测试指标和仿真结果基本一致,233 K低温下该LNA的Gain实测值比常温下测试结果增大1 dB左右,其它指标基本一致,证实了采用SiGe HBT放大芯片设计的低噪声放大器噪声性能良好且具有低温敏特性。In this paper,a wideband low noise amplifier(LNA)with frequency covering VHF to L-band is designed by using a two-stage SiGe HBT low noise amplifier chip and using ADS2015 to carry out wideband circuit matching.Simulation results show that the LNA operating frequency ranges from 0.07 to 2 GHz,Gain>30 dB,NF<0.78,Gain Flatness<0.2 dB,and Return Loss<-10dB.The measured results of the LNA is basically consistent with the simulation at room temperature.The Gain of the LNA at 233K cryogenic temperature is about 1dB higher than that measured at room temperature.The other indicators are almost the same.The experiment proves that the LNA designed with the SiGe HBT amplifier chip has good low noise and low temperature sensitivity.

关 键 词：宽带电路匹配 低噪声放大器 低温 低温敏特性 

分 类 号：TN722.3[电子电信—电路与系统]