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作 者:李成[1] 杨世红 薛晓磊 李丹[1] LI Cheng;YANG Shi-hong;XUE Xiao-lei;LI Dan(Xi'an Jiaotong University,Xi'an 710049,China)
机构地区:[1]西安交通大学,陕西西安710049 [2]陕西亚成微电子股份有限公司,陕西西安710075
出 处:《电力电子技术》2021年第10期133-136,共4页Power Electronics
摘 要:高侧开关作为在以飞机、船舶、车辆为代表的应用领域中控制电动机、继电器、照明等机电、环控系统的关键器件,其负载常呈感性。针对高侧开关关断时感性负载产生的反向电压可能会损坏高侧开关的问题,提出并设计了一种负电压箝位技术。通过理论分析得到了高侧开关关断时的工作原理,为高侧开关的设计提供了参考。芯片采用CSMC 1 μm工艺实现,已流片。测试结果显示,负压箝位电路可将高侧开关的漏源电压控制在64 V以内,可有效地保护高侧开关。High side switch,as a key component in electromechanical and environmental control system such as motor,relay and lighting,is widely used in aircraft,ships and vehicles.In order to solve the problem arising from the reverse voltage generated by inductive load which may damage the high side switch when it turns off,a negative voltage clamp technique is proposed and designed.Through theoretical analysis,the working principle of high side switch turning off is obtained,which provides a reference for the design of high side switch.The chip is fabricated in CSMC 1 μm process.The measurement results show that the negative voltage clamp circuit can control the drain source voltage of the high side switch within 64 V,and can effectively protect the high side of the switch.
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