氧化铪基铁电场效应晶体管存储器研究进展  

Research Progress of the Memory for the Hafnium Oxide Based Ferroelectric Field Effect Transistor

作　　者：潘奥霖 杜爱民[1,2,3] Pan Aolin;Du Aimin(Key Laboratory of Earth and Planetary Physics,Institute of Geology and Geophysics,Chinese Academy of Sciences,Beijing 100029,China;Institutions of Earth Science,Chinese Academy of Sciences,Beijing 100029,China;College of Earth and Planetary Sciences,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院地质与地球物理研究所地球与行星物理重点实验室,北京100029 [2]中国科学院地球科学研究院,北京100029 [3]中国科学院大学地球与行星科学学院,北京100049

出　　处：《半导体技术》2021年第10期745-753,800,共10页Semiconductor Technology

基　　金：中国科学院战略性先导科技专项(XDA14040404,XDA14040403)。

摘　　要：铁电存储器是一种具有很多优异性能的非易失性存储器。总结了氧化铪(HfO_(2))基铁电场效应晶体管(FeFET)存储器的研究进展,并对其存储性能进行了探讨。具铁电性的掺杂HfO_(2)的薄膜可以薄至几纳米,并与CMOS工艺兼容,因此,FeFET可作为新型存储器,但其存储的耐久性有限,会导致存储失效。FeFET存储器的失效原因主要有疲劳、印记、保持性损失等。增强其耐久性的主要方法有铁电薄膜掺杂、退火处理、调整薄膜厚度、合理利用应变效应以及正确处理界面效应等。改善FeFET存储器的抗疲劳能力需考虑多种因素,如薄膜成分、加工过程的温度和压力条件等。对HfO_(2)基铁电薄膜抗疲劳问题的研究,应优先考虑薄膜成分,在此基础上研究加工工艺。Ferroelectric memory is a kind of nonvolatile memories with many excellent properties.Recent advances of the memory for the hafnium oxide(HfO_(2)) based ferroelectric field effect transistor(FeFET) are summarized, and its memory performance is discussed.The ferroelectric HfO_(2) doped films can be as thin as several nanometers and are compatible with the CMOS process.Therefore, the FeFET can be used as a new type of memory, but its storage endurance is limited, which may lead to storage failure.The failure of the FeFET memory mainly results from fatigue, imprint, retention loss and so on.The main methods to enhance its endurance include doping ferroelectric films, annealing treatment, adjusting film thickness, reasonable use of strain effect and correctly dealing with interface effect and so on.In order to improve the anti-fatigue ability of the FeFET memory, many factors should be considered, such as film composition, processing temperature, pressure conditions, etc.For the study of fatigue resistance of HfO_(2) based ferroelectric films, the film composition should be given priority, and the processing technology should be studied on this basis.

关 键 词：氧化铪(HfO_(2)) 铁电场效应 铁电存储器 存储失效 抗疲劳 

分 类 号：TP333.5[自动化与计算机技术—计算机系统结构]