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作 者:林少鑫 张志浩[1] 刘子林 蔡颖斌 章国豪 Lin Shaoxin;Zhang Zhihao;Liu Zilin;Cai Yingbin;Zhang Guohao(School of Information Engineering,Guangdong University of Technology,Guangzhou 510000,China)
出 处:《半导体技术》2021年第10期769-773,778,共6页Semiconductor Technology
基 金:国家重点研发计划项目(2018YFB1802100);国家自然科学基金资助项目(61974035)。
摘 要:针对5G移动通信系统中频段,基于InGaP/GaAs异质结双极晶体管(HBT)工艺,设计了一款宽带高增益驱动放大器。该放大器采用并联式负反馈的两级放大结构,运用等Q值法设计宽带的输入、级间和输出匹配网络,实现了覆盖2.5~5 GHz工作频段和25 dB以上的小信号增益。放大器的输出匹配网络在片外基板上实现,采用方形扁平无引脚(QFN)封装。测试结果表明,室温下,设计的驱动放大器全频段饱和输出功率大于26 dBm,饱和工作效率大于32%,1 dB压缩点输出功率大于24 dBm。在采用输入功率0 dBm、间隔1 MHz的双音信号测试下,全频段的输出三阶交调点均大于30.5 dBm。采用4G-LTE、时分双工、下行和带宽20 MHz的调制信号,分别在2.6、3.6和4.9 GHz三个工作频点测试,放大器的输出功率为15 dBm时,邻近信道功率比(ACPR)约为-38 dBc。A wideband high gain driver amplifier was designed based on InGaP/GaAs heterojunction bipolar transistor(HBT) process for mid-band of the 5 G mobile communication system.Adopting a two-stage amplifier structure with parallel negative feedbacks and designing wideband input, inter-stage and output matching networks with the equal-Q value method, the amplifier achieves a 2.5-5 GHz working frequency band and over 25 dB small signal gain.The output matching network of the amplifier was realized on the off-chip substrate, which can be packaged in a quad flat no-lead(QFN) package.The measured results show that at room temperature, the designed driver amplifier exhibits a full band saturation output power of more than 26 dBm, a saturated working efficiency of more than 32% and an output power at 1 dB compression point of more than 24 dBm.Under the dual-tone test with the signal of the input power of 0 dBm and the interval of 1 MHz, the output third-order intermodulation point of the full band is above 30.5 dBm.In the 4 G-LTE,time division duplex, downlink and 20 MHz bandwidth modulation signal test at three frequency points of 2.6,3.6 and 4.9 GHz, the amplifier achieves an adjacent channel power ratio(ACPR) of about-38 dBc at the output power of 15 dBm.
关 键 词:宽带 高增益 驱动放大器 5G移动通信 等Q值法
分 类 号:TN43[电子电信—微电子学与固体电子学]
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