Oxygen vacancies and V co-doped Co_(3)O_(4) prepared by ion implantation boosts oxygen evolution catalysis  

作　　者：Bo Sun Dong He Hongbo Wang Jiangchao Liu Zunjian Ke Li Cheng Xiangheng Xiao 孙博;贺栋;王宏博;刘江超;柯尊健;程莉;肖湘衡(Department of Physics,Hubei Nuclear Solid Physics Key Laboratory,Wuhan University,Wuhan 430072,China)

机构地区：[1]Department of Physics,Hubei Nuclear Solid Physics Key Laboratory,Wuhan University,Wuhan 430072,China

出　　处：《Chinese Physics B》2021年第10期73-78,共6页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.12025503,U1867215,and U1932134);Hubei Provincial Natural Science Foundation(Grant No.2019CFA036);the Fundamental Research Funds for the Central Universities,China(Grant No.2042020kf0211);China Postdoctoral Science Foundation(Grant No.2020M682429)。

摘　　要：Introducing heteroatoms and defects is a significant strategy to improve oxygen evolution reaction(OER)performance of electrocatalysts.However,the synergistic interaction of the heteroatom and defect still needs further investigations.Herein,we demonstrated an oxygen vacancy-rich vanadium-doped Co_(3)O_(4)(V-Ov-Co_(3)O_(4)),fabricated by V-ion implantation,could be used for high-efficient OER catalysis.X-ray photoelectron spectra(XPS)and density functional theory(DFT)calculations show that the charge density of Co atom increased,and the reaction barrier of reaction pathway from O∗to HOO∗decreased.V-Ov-Co_(3)O_(4) catalyst shows a low overpotential of 329 mV to maintain current density of 10 mA·cm^(−2),and a small Tafel slope of 74.5 mV·dec^(−1).This modification provides us with valuable perception for future design of heteroatom-doped and defect-based electrocatalysts.

关 键 词：ion implantation oxygen vacancy oxygen evolution reaction heteroatom doping 

分 类 号：TQ116.2[化学工程—无机化工] TQ426