Scalable fabrication of Bi_(2)O_(2)Se polycrystalline thin film for near-infrared optoelectronic devices applications  

作　　者：Bin Liu Hong Zhou 刘斌;周洪(School of Physics and Electronics,Hunan University,Changsha 410082,China)

机构地区：[1]School of Physics and Electronics,Hunan University,Changsha 410082,China

出　　处：《Chinese Physics B》2021年第10期470-475,共6页中国物理B（英文版）

基　　金：supported by the Hunan Provincial Natural Science Foundation of China(Grant No.2019JJ40032)。

摘　　要：We present a controlled,stepwise formation of layered semiconductor Bi_(2)O_(2)Se thin films prepared via the vapour process by annealing topological insulator Bi_(2)Se3 thin films in low oxygen atmosphere for different reactions.Photodetectors based on Bi_(2)O_(2)Se thin film show a responsivity of 1.7×10^(4) A/W at a wavelength of 980 nm.Field-effect transistors based on Bi_(2)O_(2)Se thin film exhibit n-type behavior and present a high electron mobility of 17 cm^(2)/V·s.In addition,the electrical properties of the devices after 4 months keeping in the air shows little change,implying outstanding air-stability of our Bi_(2)O_(2)Se thin films.From the obtained results,it is evident that low oxygen annealing is a surprisingly effective method to fabricate Bi_(2)O_(2)Se thin films for integrated optoelectronic applications.

关 键 词：thin films Bi_(2)Se_(3) vapor-phase deposition PHOTODETECTOR Bi_(2)O_(2)Se 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TN214[电子电信—物理电子学]