Understanding of impact of carbon doping on background carrier conduction in GaN  

作　　者：Zhenxing Liu Liuan Li Jinwei Zhang Qianshu Wu Yapeng Wang Qiuling Qiu Zhisheng Wu Yang Liu 刘振兴;李柳暗;张津玮;吴千树;王亚朋;丘秋凌;吴志盛;刘扬(School of Electronics and Information Technology,Sun Yat-Sen University,Guangzhou 510275,China;State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-sen University,Guangzhou 510275,China)

机构地区：[1]School of Electronics and Information Technology,Sun Yat-Sen University,Guangzhou 510275,China [2]State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-sen University,Guangzhou 510275,China

出　　处：《Chinese Physics B》2021年第10期506-512,共7页中国物理B（英文版）

基　　金：supported by the National Key Research and Development Program of China(Grant No.2017YFB0402800);the Key Research and Development Program of Guangdong Province,China(Grant No.2020B010174003);the National Natural Science Foundation of China(Grant No.U1601210);the Natural Science Foundation of Guangdong Province,China(Grant No.2015A030312011)。

摘　　要：The impact of carbon doping on the background carrier conduction in GaN has been investigated.It is found that the incorporation of carbon can effectively suppress the n-type background carrier concentration as expected.Moreover,from the fitting of the temperature-dependent carrier concentration and mobility,it is observed that high nitrogen-vacancy(VN)dominates the background carrier at room temperature which consequently results in n-type conduction.The doping agent(carbon atom)occupies the nitrogen site of GaN and forms CN deep acceptor as revealed from photoluminescence.Besides,a relatively low hole concentration is ionized at room temperature which was insufficient for the compensation of n-type background carriers.Therefore,we concluded that this background carrier concentration can be suppressed by carbon doping,which substitutes the N site of GaN and finally decreases the VN.

关 键 词：electrical properties and parameters semiconductor materials chemical vapor deposition electronic transport 

分 类 号：TQ133.51[化学工程—无机化工] TN303[电子电信—物理电子学]