Electrically-manipulable electron-momentum filter based on antiparallel asymmetric doubleδ-magnetic-barrier semiconductor microstructure  

作　　者：Ge Tang Ying-Jie Qin Shi-Shi Xie Meng-Hao Sun 唐鸽;覃英杰;谢诗诗;孙梦豪(College of Science,Shaoyang University,Hunan 422004,China;College of Science,Guilin University of Technology,Guilin 541004,China)

机构地区：[1]College of Science,Shaoyang University,Hunan 422004,China [2]College of Science,Guilin University of Technology,Guilin 541004,China

出　　处：《Chinese Physics B》2021年第10期530-533,共4页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.11864009).

摘　　要：We theoretically investigate the wave-vector filtering(WVF)effect for electrons in an antiparallel asymmetric doubleδ-magnetic-barrier microstructure under a bias,which can be fabricated experimentally by patterning two asymmetric ferromagnetic(FM)stripes on the top and the bottom of GaAs/AlxGa1−xAs heterostructure,respectively.It is found that an appreciable WVF effect appears because of an essentially two-dimensional(2D)process for electrons across this microstructure.WVF effect is found to be sensitive to the applied bias.WVF efficiency can be tuned by changing bias,which may lead to an electrically-controllable momentum filter for nanoelectronics device applications.

关 键 词：magnetic microstructure BIAS wave vector filtering(WVF)effect electrically-tunable momentum filter 

分 类 号：TN713[电子电信—电路与系统] O469[理学—凝聚态物理]