Conductance and dielectric properties of hydrogen and hydroxyl passivated SiCNWs  

作　　者：Wan-Duo Ma Ya-Lin Li Pei Gong Ya-Hui Jia Xiao-Yong Fang 马婉铎;李亚林;龚裴;贾亚辉;房晓勇(Key Laboratory for Microstructural Material Physics of Hebei Province,School of Science,Yanshan University,Qinhuangdao 066004,China)

机构地区：[1]Key Laboratory for Microstructural Material Physics of Hebei Province,School of Science,Yanshan University,Qinhuangdao 066004,China

出　　处：《Chinese Physics B》2021年第10期609-616,共8页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.11574261);the Natural Science Foundation of Hebei Province,China(Grant No.A2021203030).

摘　　要：Based on the transport theory and the polarization relaxation model,the effects of hydrogen and hydroxyl passivation on the conductivity and dielectric properties of silicon carbide nanowires(SiCNWs)with different sizes are numerically simulated.The results show that the variation trend of conductivity and band gap of passivated SiCNWs are opposite to the scenario of the size effect of bare SiCNWs.Among the influencing factors of conductivity,the carrier concentration plays a leading role.In the dielectric properties,the bare SiCNWs have a strong dielectric response in the blue light region,while passivated SiCNWs show a more obvious dielectric response in the far ultraviolet-light region.In particular,hydroxyl passivation produces a strong dielectric relaxation in the microwave band,indicating that hydroxyl passivated SiCNWs have a wide range of applications in electromagnetic absorption and shielding.

关 键 词：silicon carbide nanowires PASSIVATION conductance properties dielectric relaxation 

分 类 号：TQ163.4[化学工程—高温制品工业] TB383.1[一般工业技术—材料科学与工程]