Enhancement of photoelectrochemical performance in ferroelectric films via the introduction of an Au buffer layer  

作　　者：Dawei Cao Ming Li Jianfei Zhu Yanfang He Tong Chen Yuan Liu Mingming Chen Ying Yang 

机构地区：[1]Department of Physics,Jiangsu University,Zhenjiang 212013,China

出　　处：《Journal of Semiconductors》2021年第11期61-69,共9页半导体学报（英文版）

基　　金：This work was supported by National Natural Science Foundation of China(Grant No.51702130);the Innovation/Entrepreneurship Program of Jiangsu Province and the project of Zhenjiang Key Laboratory of Advanced Sensing Materials and Devices(No.SS2018001)。

摘　　要：The inefficient separation of photogenerated carriers has become a serious problem that limits the photoelectrochemical(PEC)performance of semiconductors.Herein,a sol-gel method was used to prepare BiFeO_(3) ferroelectric thin films with FTO and FTO/Au as substrates,respectively.The polarization electric field of the ferroelectric can more effectively separate the carriers generated in the photoelectrode.Meanwhile,the introduction of an Au buffer layer can reduce the resistance in the process of charge transfer,accelerate the carrier migration,and enhance the efficiency of the charge separation.Under light irradiation,Au/BiFeO_(3) photoelectrode exhibited an extraordinary improvement in PEC water splitting compared with BiFeO_(3).In addition,the ferroelectric polarization electric field causes band bending,which further accelerates the separation of electrons and holes and improves the PEC performance of the photoelectrode.This work promotes the effective application of ferroelectric films in PEC water splitting.

关 键 词：PHOTOELECTROCHEMICAL BIFEO3 ferroelectric films charge separation 

分 类 号：TB383.2[一般工业技术—材料科学与工程]