无氢硅烷常压化学气相沉积SiO_(x)薄膜在晶体硅太阳能电池制造中的应用  

Application of SiO thin films deposited by hydrogen free silane atmospheric pressure chemical vapor deposition in the manufacture of crystalline silicon solar cells

作　　者：赵毅 ZHAO Yi(Shanxi Xingxin Safety Production Technology Service Co.,Ltd.,Taiyuan Shanxi 030000,China)

机构地区：[1]山西兴新安全生产技术服务有限公司,山西太原030000

出　　处：《山西化工》2021年第5期27-28,34,共3页Shanxi Chemical Industry

摘　　要：提出SiO_(x)薄膜沉积在成本效益高的实验室规模三维打印常压化学气相沉积装置,研究了镀层的完整性、与各种表面的一致性以及处理后的回弹性,并讨论了常压化学气相沉积(APCVD)法制备的薄膜。研究表明,在不同的应用中,常压化学气相沉积法制备的薄膜在钝化发射体的正面和背面太阳能电池上起到保护寄生电镀的作用。SiO_(x) films were deposited in a cost-effective laboratory scale three-dimensional printing atmospheric pressure chemical vapor deposition device. The integrity of the coating, its consistency with various surfaces and the resilience after treatment were studied, and the films prepared by atmospheric pressure chemical vapor deposition(APCVD) were discussed. The results show that the films prepared by atmospheric pressure chemical vapor deposition can protect parasitic plating on the front and back solar cells of passivated emitters in different applications.

关 键 词：无氢硅烷 SiO_(x)薄膜 晶体硅太阳能电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]