Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS_(2)mixed-dimensional phototransistors  

作　　者：Ziwei Li Wen Yang Ming Huang Xin Yang Chenguang Zhu Chenglin He Lihui Li Yajuan Wang Yunfei Xie Zhuoran Luo Delang Liang Jianhua Huang Xiaoli Zhu Xiujuan Zhuang Dong Li Anlian Pan 

机构地区：[1]Key Laboratory for Micro-Nano Physics and Technology of Hunan Province,College of Materials Science and Engineering,School of Physics and Electronics,Hunan University,Changsha 410082,China

出　　处：《Opto-Electronic Advances》2021年第9期28-38,共11页光电进展（英文）

基　　金：This work is supported by National Natural Science Foundation of China(No.92163135,11904098,51972105,U19A2090 and 62090035);Hunan Provincial Natural Science Foundation of China(No.2019JJ30004);Hunan International Innovation Cooperation Platform(No.2018WK4004);Key Program of Science and Technology Department of Hunan Province(Nos.2019XK2001,2020XK2001).

摘　　要：Mix-dimensional van der Waals heterostructures(vdWHs)have inspired worldwide interests and efforts in the field of ad-vanced electronics and optoelectronics.The fundamental understanding of interfacial charge transfer is of vital import-ance for guiding the design of functional optoelectronic applications.In this work,type-Ⅱ0D-2D CdSe/ZnS quantum dots/MoS_(2)vdWHs are designed to study the light-triggered interfacial charge behaviors and enhanced optoelectronic performances.From spectral measurements in both steady and transient states,the phenomena of suppressed photolu-minescence(PL)emissions,shifted Raman signals and changed PL lifetimes provide strong evidences of efficient charge transfer at the 0D-2D interface.A series of spectral evolutions of heterostructures with various QDs overlapping concentrations at different laser powers are analyzed in details,which clarifies the dynamic competition between exciton and trion during an efficient doping of 3.9×10^(13)cm^(−2).The enhanced photoresponses(1.57×10^(4)A·W^(-1))and detectivities(2.86×10^(11)Jones)in 0D/2D phototransistors further demonstrate that the light-induced charge transfer is still a feasible way to optimize the performance of optoelectronic devices.These results are expected to inspire the basic understand-ing of interfacial physics at 0D/2D interfaces,and shed the light on promoting the development of mixed-dimensional op-toelectronic devices in the near future.

关 键 词：heterostructure PHOTOTRANSISTOR MoS_(2) quantum dots 

分 类 号：TN364.3[电子电信—物理电子学]