Synthesis,Crystal Structure and Fluorescent Properties of New Layered Thiophosphate Cs_(2)Ga_(3)PS_(8)  

作　　者：CHEN Wen-Fa LIU Bin-Wen JIANG Xiao-Ming GUO Guo-Cong 

机构地区：[1]State Key Laboratory of Structural Chemistiy,Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences,Fuzhou 350002,China [2]University of Chinese Academy of Sciences,Beijing 100190,China

出　　处：《Chinese Journal of Structural Chemistry》2021年第10期1271-1276,共6页结构化学（英文）

基　　金：supported by the NSF of China(21827813,21921001,22075283);Scientific Research Fund of Natural Science Foundation of Fujian Province(2020J01115);the Youth Innovation Promotion Association of CAS(No.20200303)。

摘　　要：A new quaternary metal thiophosphate,Cs_(2)Ga_(3)PS_(8),in triclinic P1^(-) space group has been successfully synthesized by a reactive-flux method.Its structural framework is derived from well-known AM^(Ⅲ)M^(Ⅳ)Q_(4) (A=alkali metal;M^(Ⅲ)=Al,Ga,In;M^(Ⅳ)=Si,Ge,Sn;Q=S,Se) system and composed of two-dimensional ^(2)∞[Ga_(3)PS_(8)]^(2-) layers separated by Cs^(+).The compound exhibits a wide band gap of 3.08 eV and congruent-melting behavior with melt point of 645℃.Interestingly,Cs_(2)Ga_(3)PS_(8) exhibits a broad photoluminescent emission band at 420 nm upon excitation at 295 nm.Moreover,electronic structure calculations indicate that Cs_(2)Ga_(3)PS_(8) is a direct band gap compound and its luminescent process can be mainly ascribed to electron transfer from the S-3p and Ga-4p states to S-3p and P-3p.

关 键 词：CHALCOGENIDE THIOPHOSPHATE crystal structure solid-state phase SYNTHESIS 

分 类 号：TB34[一般工业技术—材料科学与工程]