Space-charge effect on photogenerated-current and-voltage inⅢ-nitride optoelectronic semiconductors  

作　　者：DONG-PYO HAN MOTOAKI IWAYA TETSUYA TAKEUCHI SATOSHI KAMIYAMA ISAMU AKASAKI 

机构地区：[1]Faculty of Science and Technology,Meijo University,Nagoya 468-8502,Japan [2]Akasaki Research Center,Nagoya University,Nagoya 464-8603,Japan

出　　处：《Photonics Research》2021年第9期1820-1828,共9页光子学研究（英文版）

基　　金：Ministry of Education,Culture,Sports,Science and Technology(Private University Research Branding Project,Program for Research and Development of Next-Generation Semiconductor to Realize Energy-Saving Society);Core Research for Evolutional Science and Technology(16815710);Japan Society for the Promotion of Science(15H02019,16H06416,17H01055)。

摘　　要：In this study,we attempted to elucidate the carrier dynamics behind the abnormal characteristics of photogenerated current and voltage(IPhand VPh)at cryogenic temperature inⅢ-nitride optoelectronic semiconductors by employing space-charge theory.To this end,we carefully investigated and analyzed excitation-powerdependentⅠ-Ⅴ(PDIV)curves operated by quasiresonant excitation of an Al Ga In N-based p-i-n junction semiconductor at 300 K and 15 K.At 300 K,the curves exhibited typical characteristics and were well described by the conventional theory.However,the PDIV curves at 15 K could no longer be described by the conventional theory.To elucidate the mechanism behind this phenomenon,we proposed a model in which the space-charge effect(SCE)plays a key role.Based on this model,we proposed the modified Shockley diode equation,which can explain the PDIV characteristic at 15 K,including the SCE.We also discussed the SCE on the efficiency of devices.

关 键 词：OPTOELECTRONIC Shockley CHARGE 

分 类 号：TN30[电子电信—物理电子学]