NiO含量对ZnO压敏电阻性能的影响  

Effect of NiO Doping on the Properties of ZnO-Based Varistors

作　　者：王曼玉 任鑫[1] 江海波 李竹韵 燕颖 阮雪君 姚政[1] 余文琪 金鹿江[1] 施利毅[1] WANG Manyu;REN Xin;JIANG Haibo;LI Zhuyun;YAN Ying;RUAN Xuejun;YAO Zheng;YU Wenqi;JIN Lujiang;SHI Liyi(Nano-Science and Technology Research Center,Shanghai University,Shanghai 200444,China)

机构地区：[1]上海大学纳米科学与技术研究中心,上海200444

出　　处：《电瓷避雷器》2021年第5期164-168,共5页Insulators and Surge Arresters

基　　金：上海市自然科学基金(编号:17ZR1410300)。

摘　　要：研究了不同NiO含量对ZnO基压敏电阻微观结构、相组成电学性能的影响。结果表明,掺杂合适含量的NiO能够有效的改善ZnO基压敏电阻的电气性能,这可被归因为NiO的掺杂能够调整ZnO的晶粒取向,从而使ZnO压敏陶瓷形成了更加均一的显微结构。CE5样品(NiO摩尔分数为1.55%)具有优秀的综合电气性能,其电位梯度为184.00 V/mm,非线性系数α为72.7,漏电流为0.45μA,在20 kA和30 kA下的压比分别为2.20和2.38。此外,在20组20 kA及2组30 kA脉冲浪涌电流冲击后,CE5也仍然显示出最优的电气性能。The effects of various NiO contents on the microstructures, phase compositions and electrical properties of the ZnO varistors were systematically studied. The results showed that when doped with appropriate amount of NiO, the comprehensive electrical properties would be effectively improved, which attributed to the fact that the doping of NiO adjusts the grain orientation of ZnO grain, resulting in a more homogenized microstructure of ZnO varistors. The sample doped 1. 55%NiO had excellent comprehensive electrical properties with breakdown voltage gradient of 184. 00 V/mm, nonlinear coefficient of 72. 70,leakage current density of 0. 45 μA, clamping voltage ratios of 2. 20 and 2. 38 under 20 kA and 30 kA surges, respectively. Moreover, after 20 groups of 20 kA and 2 groups of 30 kA pulse current impact,the CE5 still shows the optimal electrical performance.

关 键 词：ZNO压敏电阻 NIO 电气性能 晶粒取向 

分 类 号：TM54[电气工程—电器]