缺陷型石墨相氮化碳光催化剂的制备与应用研究进展  

Preparation and application of defective graphite phase carbon nitride photocatalysts

作　　者：叶珊珊 冯程洋 王佳佳 汤琳[1,2] Shanshan Ye;Chengyang Feng;Jiajia Wang;Lin Tang(College of Environmental Science and Engineering,Hunan University,Changsha 410082,China;Key Laboratory of Environmental Biology and Pollution Control(Hunan University),Ministry of Education,Changsha 410082,China)

机构地区：[1]湖南大学环境科学与工程学院,长沙410082 [2]湖南大学环境生物学与污染控制教育部重点实验室,长沙410082

出　　处：《科学通报》2021年第30期3822-3838,共17页Chinese Science Bulletin

基　　金：湖南省创新型省份建设专项(2019RS3012)资助。

摘　　要：半导体光催化剂是解决环境污染和能源危机的有效途径之一.石墨相氮化碳(g-C_(3)N_(4))作为一种新兴的高效催化剂,具有较好的稳定性,在光催化技术中展现出巨大的工程应用潜力.然而,未经改性的g-C_(3)N_(4)可见光响应范围有限,并且光激发电荷载流子复合速率高,从而导致光催化活性较低.通过向g-C_(3)N_(4)中引入缺陷,可以扩展光响应区域,并作为电子空穴激发的活性中心,提高光催化性能.本文在实验和理论研究进展的基础上,系统地综述了缺陷g-C_(3)N_(4)的合成方法、缺陷位点对g-C_(3)N_(4)的影响以及其在水处理中的应用,如抗生素、有机农药的降解及降低重金属毒性等处理方面,还有在水分解、二氧化碳转化及光催化脱氮上的应用.最后,针对缺陷g-C_(3)N_(4)应用所面临的挑战,本文从机理探索和材料开发两方面提出了展望.With the development of industry and agriculture,the problems of environmental pollution and energy shortage have become increasingly severe.Semiconductor photocatalysis technology is one of the effective ways to solve environmental pollution and energy crisis.The principle of photocatalysis is based on the oxidation-reduction ability of photocatalysts under light conditions,which can achieve the purposes of purification of pollutants,material synthesis and transformation.Graphite phase carbon nitride(g-C_(3)N_(4)),as a new high-efficiency catalyst,has good stability and shows great engineering application potential in photocatalytic technology.However,the unmodified g-C_(3)N_(4) has a limited visible light response range,and the photo-excited charge carrier recombination rate is high,resulting in low photocatalytic activity.Nitrogen defects are introduced into the g-C_(3)N_(4) framework.These defects can manipulate the electronic structure,and the interstitial state produced can be used as a band-tail state,which can overlap with the valence band or the conduction band.The midgap state of semiconductors can extend the light response and act as an active center for electron-hole excitation.Introducing defects into g-C_(3)N_(4) can improve the photocatalytic activity of g-C_(3)N_(4).This paper systematically reviews the physical,chemical and electrochemical properties of g-C_(3)N_(4) on the basis of experimental and theoretical research progress.The synthesis methods of defect g-C_(3)N_(4) are summarized,including adjustment before polymerization,adjustment during polymerization,and adjustment after polymerization.The adjustment before polymerization is to introduce defects by changing the precursor,such as adding hydroxide,sodium borohydride and other substances to the precursor.The adjustment during polymerization is to provide a reducing atmosphere during polymerization can prepare g-C_(3)N_(4) with different nitrogen-vacancy densities,such as hydrogen,ammonia and so on.The adjustment after polymerization is to

关 键 词：g-C_(3)N_(4) 氮缺陷 光催化 电子空穴对 能带调控 

分 类 号：X505[环境科学与工程—环境工程] O643.36[理学—物理化学] O644.1[理学—化学]