Single-Atom Vacancy Doping in Two-Dimensional Transition Metal Dichalcogenides  

作　　者：Xiankun Zhang Li Gao Huihui Yu Qingliang Liao Zhuo Kang Zheng Zhang Yue Zhang 

机构地区：[1]Academy for Advanced Interdisciplinary Science and Technology,School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,People’s Republic of China [2]Beijing Advanced Innovation Center for Materials Genome Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,People’s Republic of China [3]Beijing Advanced Innovation Center for Materials Genome Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies and State Key Laboratory for Advanced Metals and Materials,School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,People’s Republic of China

出　　处：《Accounts of Materials Research》2021年第8期655-668,共14页材料研究述评（英文）

基　　金：supported by the Natural Science Foundation of Beijing Municipality(Grant No.Z180011);the National Natural Science Foundation of China(Grant Nos.51991340,51991342,51972022,52072031,52072029);the National Key Research and Development Program of China(Grant,2016YFA0202701);the Overseas Expertise Introduction Projects for Discipline Innovation(Grant No.B14003);the Fundamental Research Funds for the Central Universities(Grant Nos.FRF-TP-19-025A3).

摘　　要：CONSPECTUS:Faced with the growing quests of higher-performance chips,developing new channel semiconductors immune to short channel effects has become a realistic option for continuing Moore’s Law.With outstanding gate electrostatic capacitance,stable chemical properties,and suitable bandgap,two-dimensional(2D)transition metal dichalcogenides(TMDCs)are considered as potential candidates for next-generation channel materials.However,the practical applications of 2D TMDCs are severely limited by stable,precise,and controllable doping technologies,due to their ultrathin body and dangling bond-free surface.Compared to three-dimensional semiconductors,donors in 2D semiconductors need larger ionization energy which can be attributed to the reduced screening of Coulomb interaction and the larger bandgap induced by quantum confinement.Limited by the ultrathin body of 2D TMDCs and the strong film−substrate charge transfer,typical silicon-based substitutional doping technology encounters some headache difficulties in 2D TMDCs and hardly achieves high-concentration doping.The other two doping technologies also cannot take on this task either;local gate electrostatic doping cannot leave the aid of the external electric field.And surface charge transfer doping of molecule adsorbents behaves unstably(e.g.,thermal desorption)or ineffectively modifies the original electronic structure.Fortunately,single-atom vacancies can effectively and precisely adjust the carrier concentration of 2D TMDCs and significantly enhance their conductivity.Therefore,clarifying the work rules and function mechanism of single-atom vacancy doping in 2D TMDCs is beneficial in creating a brand-new optimization strategy of electrical properties and overcoming the technical obstacles of the“lab-to-fab”transition for their practical applications in high-performance electronics and optoelectronics.In this Account,we summarize the state-of-the-art progress in single-atom vacancy doping in 2D TMDCs and highlight the applications in optoelectronic and el

关 键 词：DOPING PRECISE ELECTROSTATIC 

分 类 号：TN3[电子电信—物理电子学]