Phonon transmission of vacancy disordered armchair silicene nanoribbon  

作　　者：Ashraful Hossain Howlader Md.Sherajul Islam Naim Ferdous 

机构地区：[1]School of Physics,The University of Sydney,New South Wales 2006,Australia [2]Department of Electrical and Electronic Engineering,Khulna University of Engineering and Technology,Khulna 9203,Bangladesh [3]Department of Electrical and Electronic Engineering,Bangabandhu Sheikh Mujibur Rahman Science and Technology University,Gopalganj 8100,Bangladesh

出　　处：《Optoelectronics Letters》2021年第8期454-458,共5页光电子快报（英文版）

摘　　要：This work demonstrates the atomic vacancy effects on the phonon properties of armchair silicene nanoribbon in a step by step process for the first time.The phonon localization effect figures out the fact that vacancies cause to high-energy phonons become localized,whereas low-energy phonons can easily transmit.The vacancy reduces high-energy phonon transmission severely compared to low-energy phonon.It is also found from phonon density of states that high-frequency phonons soften towards the low-frequency region.The simulated phonon bandstructure verifies that most of the phonon branches transform to a nondegenerate state from a degenerate state and shifted toward a lower frequency regime due to the presence of vacancies.The overall consequences of atomic vacancies on the phonon thermal conductance disclose the reality that only a few atomic vacancies result in a vital reduction of phonon thermal conductance.In addition,the entropy of the disordered system is investigated.

关 键 词：PHONON VACANCY DISORDERED 

分 类 号：TB383.1[一般工业技术—材料科学与工程]