WXAMPS theoretical study of the bandgap structure of CZTS thin film to improve the device performance  

作　　者：WANG Yanping WANG Jiao LI Haoran ZHAO Aimei LI Bing BI Jinlian LI Wei 王延平;王姣;李浩然;赵爱美;李冰;毕金莲;李微(Tianjin Key Laboratory of Film Electronic and Communication Devices,School of Electrical and Electronic Engineering,Tianjin University of Technology,Tianjin 300384,China)

机构地区：[1]Tianjin Key Laboratory of Film Electronic and Communication Devices,School of Electrical and Electronic Engineering,Tianjin University of Technology,Tianjin 300384,China

出　　处：《Optoelectronics Letters》2021年第8期475-481,共7页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61804108)。

摘　　要：The carrier recombination was one of the factors limiting the further improvement of the Cu2ZnSnS4(CZTS)thin film solar cells.In this paper,a proper bandgap structure was designed to solve this problem.The effects of the different bandgap structure on the CZTS thin film solar cells were studied by the solar cell performance simulation software wx AMPS.A graded bandgap structure was designed and optimized.The bandgap with a front bandgap gradient and a flat bandgap gradient had a favorable effect on the CZTS thin film solar cells.Finally,the fill factor(FF)and conversion efficiency(η)of the CZTS thin film solar cell were increased from 36.41% to 42.73% and from 6.85% to 10.03%,respectively.In addition,the effect of donor and acceptor defect densities in CZTS absorber layer near the Cd S/CZTS interface on the device performance was studied,ηof the CZTS thin film solar cell was increased from 5.99% to 7.55% when the acceptor defect concentration was 10^(12)—10^(13) cm^(-3).Moreover,the thicknesses of the CZTS absorber layer were optimized.The FF andηof the CZTS thin film solar cell were increased to 63.41% and 15.04%,respectively.

关 键 词：CZTS FILM performance 

分 类 号：TM914.42[电气工程—电力电子与电力传动]