后摩尔时代硅基片上光源研究进展  

Research progress of silicon light sources in the Post-Moore Era

作　　者：朱元昊 温书育 何力 骆军委[1,2] ZHU Yuanhao;WEN Shuyu;HE Li;LUO Junwei(State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto·Eletronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《微纳电子与智能制造》2021年第1期136-149,共14页Micro/nano Electronics and Intelligent Manufacturing

基　　金：中国科学院稳定支持基础研究领域青年团队计划(YSBR-026);中国科学院战略性先导科技专项(B类)(XDB43000000);国家杰出青年科学基金(11925407)资助。

摘　　要：硅基光电子有着与互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)工艺兼容的优势,借助现有成熟的硅工业体系可以实现从理论设计到产品制造的快速转化。通过光互连与电互联的相互结合、取长补短,克服现有材料的限制,发挥新兴材料的优势,体现光电子集成在后摩尔时代高效化信息处理方面的优势。硅基光互连的实现需要依托于与当前集成电路制造工艺兼容的高效硅基片上光源。概述了后摩尔时代硅基片上光源的研究进展与面临的困难,重点介绍了本研究组在硅量子点(quantum dot,QD)光源、硅锗基光源、硅基应变锗光源等方面的研究进展。Silicon-based optoelectronics is compatible with CMOS process and can realize the rapid transformation from theoretical to production with the help of existing mature silicon industry system.Through the combination of optical interconnection and electrical interconnection,the limitations of existing mate rials could be overcome,the advantages of emerging materials could be used,which reflect the advantages of optoelectronic integration in the field of high-efficiency information processing in the Post-Moore Era.Achievement of silicon-based on-chip optical interconnect needs the high-efficiency silicon-based on-chip light sources,which have to be compatible with existing integrated circuit manufacturing process.The research progress of silicon based light sources in the Post-Moore Era is introduced in this paper,especially the research progress of our research group in silicon-based quantum dot light source,silicon-based strained germanium light source.

关 键 词：光电集成 硅基光电子 硅基发光材料 片上光互连 

分 类 号：TN2[电子电信—物理电子学]