An Improved Active Miller Clamp Crosstalk Suppression Method for Enhancement-Mode GaN HEMTs in Phase-Leg Configuration  

基于增强型GaN HEMT的改进型桥臂串扰抑制方法研究

作　　者：QIN Haihong WANG Wenlu BU Feifei PENG Zihe LIU Ao BAI Song 秦海鸿;汪文璐;卜飞飞;彭子和;刘奥;柏松(南京航空航天大学自动化学院,中国南京211106;南京电子器件研究所宽禁带半导体电力电子器件国家重点实验室,中国南京210016)

机构地区：[1]College of Automation Engineering,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,P.R.China [2]State Key Laboratory of Wide Bandgap Semiconductor Power Electronic Devices,Nanjing Electronic Devices Institute,Nanjing 210016,P.R.China

出　　处：《Transactions of Nanjing University of Aeronautics and Astronautics》2021年第5期758-768,共11页南京航空航天大学学报（英文版）

基　　金：supported by the Foundation of State Key Laboratory of Wide-Bandgap Semi-conductor Power Electronic Devices(No.2019KF001);National Natural Science Foundation of China(No.51677089)。

摘　　要：When using traditional drive circuits,the enhancement-mode GaN(eGaN)HEMT will be affected by high switching speed characteristics and parasitic parameters leading to worse crosstalk problems.Currently,the existing crosstalk suppression drive circuits often have the disadvantages of increased switching loss,control complexity,and overall electromagnetic interference(EMI).Therefore,this paper combines the driving loop impedance control and the active Miller clamp method to propose an improved active Miller clamp drive circuit.First,the crosstalk mechanism is analyzed,and the crosstalk voltage model is established.Through the crosstalk voltage evaluation platform,the influencing factors are evaluated experimentally.Then,the operating principle of the improved active Miller clamp drive circuit is discussed,and the optimized parameter design method is given.Finally,the effect of the improved active Miller clamp method for suppressing crosstalk is experimentally verified.The crosstalk voltage was suppressed from 3.5 V and-3.5 V to 1 V and-1.3 V,respectively,by the improved circuit.采用传统驱动电路时,增强型氮化镓(Enhancement-mode GaN,e GaN)HEMT会受高开关速度特性和寄生参数的影响,其桥臂串扰问题不容忽视,而已有桥臂串扰抑制驱动电路一般具有增加开关损耗、控制复杂程度和整机电磁干扰(Electromagnetic interference,EMI)的缺陷。为改进以上问题,本文结合驱动回路阻抗控制和有源密勒箝位方法,提出一种改进型有源密勒箝位驱动电路。首先分析了eGaN HEMT桥臂串扰的产生过程,建立了串扰电压模型,并通过桥臂串扰电压评估平台对各影响因素进行了实验评估。接着,研究了改进型有源密勒箝位驱动电路的工作原理,并通过实验对电容参数进行了优化选择。最后,对改进型有源密勒箝位方法抑制桥臂串扰的效果进行了实验验证,其将串扰电压分别从3.5 V和-3.5 V抑制到了1 V和-1.3 V。

关 键 词：enhancement-mode GaN(eGaN) crosstalk suppression gate driver high-speed switching active clamp 

分 类 号：TN925[电子电信—通信与信息系统]