The influence of H_(2)O and O_(2) on the optoelectronic properties of inverted quantum-dot light-emitting diodes  

作　　者：Zinan Chen Zhiyuan Qin Sikai Su Shuming Chen 

机构地区：[1]Guangdong University Key Lab for Advanced Quantum Dot Displays and Lighting,Shenzhen Key Lab for Advanced Quantum Dot Displays and Lighting,and Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China [2]Key Laboratory of Energy Conversion and Storage Technologies(Southern University of Science and Technology),Ministry of Education,Shenzhen,518055,China

出　　处：《Nano Research》2021年第11期4140-4145,共6页纳米研究（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China (No. 61775090);the Guangdong Natural Science Funds for Distinguished Young Scholars (No. 2016A030306017).

摘　　要：The influence of H_(2)O and O_(2) on the performances of Mg-doped zinc oxide (ZnMgO) and ZnMgO-based inverted quantum-dot light-emitting diodes (QLEDs) are studied. With the involvement of H_(2)O from ambience, ZnMgO exhibits a high conductivity, whereas the resultant QLEDs show a low efficiency. The efficiency of QLEDs can be enhanced by annealing ZnMgO in H_(2)O-free glovebox;however, the uniformity and the current of the devices are degraded due to the presence of O_(2), which adsorbs on the surface of ZnMgO and captures the free electrons of ZnMgO. By exposing the devices with ultraviolet (UV) irradiation, the adsorbed O_(2) can be released, consequently leading to the increase of driving current. Our work discloses the influence of the annealing ambience on the conductivity of ZnMgO, and reveals the interaction of H_(2)O/O_(2) and UV with the ZnMgO and its effect on the performance of the resultant inverted QLEDs, which could help the community to better understand the mechanisms of ZnMgO-based QLEDs.

关 键 词：QUANTUM-DOT light-emitting diodes ZNMGO oxygen water 

分 类 号：TN312.8[电子电信—物理电子学]