国内记忆电阻器行业现状分析研究  

Research of Memory Resistor in China

作　　者：徐敏 XU Min(Post-Doctoral Research Station,Bank of Chongqing,Chongqing 400024 China)

机构地区：[1]重庆银行博士后科研工作站,重庆400024

出　　处：《科技创新与生产力》2021年第10期48-51,54,共5页Sci-tech Innovation and Productivity

摘　　要：以万方数据知识服务平台的期刊论文、学位论文和会议论文作为数据源,综合采用文献计量学的方法,对国内记忆电阻器领域研究论文的数量及年度分布、来源期刊分布、作者合作情况分布、研究热点分布进行统计分析。旨在通过相关文献了解国内记忆电阻器研究领域的现状与特点,为相关领域的研究人员提供参考和借鉴。Taking the journal papers,dissertations and conference papers in Wanfang Data as data source,this paper uses the method of bibliometrics to analyze the number and annual distribution of domestic research papers in the field of memory resistor,and journal distribution,author distribution and research hotspots.The purpose of this paper is to understand the current situation and characteristics of memory resistor research in China through relevant literature,and to provide reference for researchers in related fields.

关 键 词：记忆电阻器 文献计量学 共现分析 统计分析 

分 类 号：TM54[电气工程—电器]