多元杂环萘二酰亚胺衍生物的合成及其场效应性能  

Synthesis of Multi-Heterocyclic Naphthalimide Derivative and Its Organic Field Effect Transistor Property

作　　者：罗河伟 李乐琦 马贺 Luo Hewei;Li Leqi;Ma He(College of Material and Chemical Engineering,Zhengzhou University of Light Industry,Zhengzhou,450002)

机构地区：[1]郑州轻工业大学,郑州450002

出　　处：《化学通报》2021年第11期1219-1223,1121,共6页Chemistry

基　　金：国家自然科学基金项目(22075255);河南省科技厅科技攻关项目(212102210649)资助。

摘　　要：杂环修饰的萘二酰亚胺(NDI)类化合物由于其独特的光电性能被研究人员广泛关注,并应用于有机场效应晶体管(OFETs)、有机太阳能电池(OSCs)、传感器等领域。但是含有给受体单元的多元杂环萘二酰亚胺衍生物的合成并不容易,本文通过简单高效的方法设计合成了含有氮、硫原子、11共轭环的萘二酰亚胺衍生物,并通过紫外可见吸收光谱、循环伏安曲线和X射线衍射对其进行了物性研究。通过溶液旋涂法制备了该材料的底栅底接触场效应晶体管器件,其在空气中表现出p型半导体性能,当退火温度为140℃时性能达到最优,空穴迁移率为0.2cm^(2)·V^(-1)·s^(-1)。Heterocyclic-modified naphthalimide(NDI)compounds have received extensive attention from researchers due to their unique optoelectronic properties and have been used in organic field effect transistors(OFETs),organic solar cells(OSCs),sensors and other fields.However,it is not easy to synthesize multi-heterocyclic naphthalimide derivatives containing donor and acceptor units.In this paper,11-heterocyclic naphthalimide derivatives containing nitrogen and sulfur atoms were designed and synthesized through a simple and efficient method.Its chemical and physical properties were studied by UV-Vis absorption spectroscopy,cyclic voltammetry curve and X-ray diffraction.The bottom-gate-bottom-contact field-effect transistor device of this material was prepared by solution spin coating method,which showed p-type semiconductor performance in the air.The maximum hole mobility reached 0.2cm^(2)·V^(-1)·s^(-1);when annealed at 140℃.

关 键 词：多元杂环合成 萘二酰亚胺 有机场效应晶体管 核位修饰 

分 类 号：TN386[电子电信—物理电子学] TQ246.31[化学工程—有机化工]