GIL内SO_(2)F_(2)扩散特性及其对组分检测的影响  

Diffusion Characteristics of SO_(2)F_(2)in GIL and Its Influence on Component Detection

作　　者：刘溟 邹建明 李振柱 周文俊[2] 邱睿 喻剑辉[2] LIU Ming;ZOU Jianming;LI Zhenzhu;ZHOU Wenjun;QIU Rui;YU Jianhui(Central China Branch of State Grid Corporation of China,Wuhan 430077,China;School of Electrical Engineering and Automation,Wuhan University,Wuhan 430072,China)

机构地区：[1]国家电网公司华中分部,武汉430077 [2]武汉大学电气与自动化学院,武汉430072

出　　处：《高压电器》2021年第11期27-34,共8页High Voltage Apparatus

基　　金：国家电网公司科技项目(SGHZ0000AJJS1800199)。

摘　　要：为明确SFe放电分解产生的特征气体SO_(2)F_(2)在GIL内的扩散特性及其对气体组分检测结果的影响,通过GIL缩比模型及扩散试验平台,分别对不同缺陷程度、时间t和缺陷处及距离缺陷1.5 m处的SO_(2)F_(2)体积分数进行了测定。结合Fick定律,对SO_(2)F_(2)在SF_(6),中的扩散过程进行了仿真。结果表明:缺陷处的SO_(2)F_(2)生成速度与放电强度具有一定的线性关系,且放电较弱时呈非线性增长,放电较强时呈线性增长。两位置处的SO_(2)F_(2)体积分数具有一定的时间延迟和衰减,但其体积分数的增长形式区别较小。GIL内的SO_(2)F_(2)扩散过程主要与时间t位置x及扩散系数DSO_(2)F_(2)/SO_(6)而SO_(2)F_(2)的生成速度不会对扩散速度产生影响。扩散过程中,x越大SO_(2)F_(2)用的扩散时延Δt越大,且CSO_(2)F_(2)会随着x增加呈指数衰减,而CS2F2的增长速率在扩散过程中不会产生明显变化。因此对于GIL设备,缺陷处的CSO_(2)F_(2)会较实际检测结果更高,以CSO_(2)F_(2),作为诊断判据时应充分考虑扩散过程的影响。而CSO_(2)F_(2)的增长速率受扩散影响较小,可能更适合作为GIL绝缘状态的诊断依据。For identifying the diffusion characteristics of the characteristic gas SO_(2)F_(2)in GIL,which is generated by the decomposition of SF_(6)discharge,and its influence on gas component detection result,the different degree of de-fects,time t and SO_(2)F_(2)volume fraction at the defect place and the place at 1.5 m far from the defect are measured respectively by the GIS scale model and diffusion test platform.Combined with Fick's law,the diffusion process of SO_(2)F_(2)in SF_(6)is simulated.The results show that the formation rate and discharge strength of SO_(2)F_(2)at the defect position has a definite linear relation and shows non-linear increase at weak discharge and linear increase at strong discharge.The SO_(2)F_(2)volume fraction at the two positions has a definite time delay and attenuation,but the difference of increase form of the volume fraction is small.The diffusion process of SO_(2)F_(2)in GIL is mainly related to the time t,position x and diffusion coefficient DSO_(2)F_(2)/S/SF_(6).However,the formation rate of SO_(2)F_(2)does not affect the diffusion speed.During the diffusion period,the larger the x is,the larger the diffusion time delay Az of SO_(2)F_(2)is,and CSO_(2)F_(2),attenuates exponentially with the increase of x,but the increase rate of does not generate remarkable variation during the diffusion period.Therefore,for GIL equipment,the CSO_(2)F_(2)at the defects position would be much higher than the actual detection results.The influence of the diffusion shall be considered when CS02F2 is taken as the diagnosis criteria.While,the influence of the diffusion on the increase rate of CSO_(2)F_(2)Fo is less and is more suit-able to be used as the diagnosis basis for the insulation status of GIL.

关 键 词：气体绝缘输电管道(GIL) 气体组分检测 绝缘诊断 放电分解 SO_(2)F_(2) 

分 类 号：TM75[电气工程—电力系统及自动化]