一款0.1~2.0 GHz的高线性度低噪声放大器  

A 0.1~2.0 GHz High Linearity Low Noise Amplifier

作　　者：张博 贺城峰 ZHANG Bo;HE Chengfeng(Xi'an University of Posts and Telecommunications,School of Electronic Engineering yXi'an 710121,CHN)

机构地区：[1]西安邮电大学电子工程学院,西安710121

出　　处：《固体电子学研究与进展》2021年第5期370-375,共6页Research & Progress of SSE

基　　金：陕西省重点研发计划项目(2018ZDXM-GY-010);西安市集成电路重大专项(201809174CY3JC16)。

摘　　要：采用0.5μm GaAs pHEMT工艺研制了一款0.1~2.0 GHz的高线性度低噪声放大器芯片。针对偏置电压随电源波动的问题,提出一种新型的具有稳压功能的有源偏置电路,既能补偿放大管阈值电压随温度的变化,又不受电源电压波动影响,同时在放大管的栅源两端增加反馈电容,以改善线性度与输入输出匹配度。测试结果显示,在频带内最大增益可达23 dB,噪声系数小于1.4 dB,OIP3大于35 dBm,P1dB大于23 dBm,芯片尺寸为1.00 mm×0.95 mm。A 0.1~2.0 GHz high linearity low noise amplifier chip was developed using 0.5μm GaAs pHEMT process Aiming at the problem that the bias voltage fluctuated with the change of power supply,a new active bias circuit with voltage stabilization function was proposed,which could compensate the shift of threshold voltage of the amplifier tube with temperature and was not affected by the fluctuation of the power supply voltage.At the same time,the feedback capacitor was added at both ends of the gate-source of the amplifier tube to improve the linearity and input-output matching.Measurement results show that the maximum gain in the frequency band can reach 23 dB,the noise factor is less than 1.4 dB,OIP3 is greater than 35 dBm,P;is more outstanding than 23 dBm,and the chip size is 1.00 mm×0.95 mm.

关 键 词：砷化镓 高线性度 有源偏置 稳压电路 低噪声放大器 

分 类 号：TN722.3[电子电信—电路与系统]