Si(111)衬底上Mg_(2)Si薄膜的XRD和拉曼光谱研究  

Investigation of XRD and Raman Spectroscopy of Mg_(2)Si Thin Film Grown on Si(111)Substrate

作　　者：廖杨芳[1] 谢泉 LIAO Yangfang;XIE Quan(College of Physics and Electronic Sciences,Guizhou Normal University,Guiyang,550001,CHN;College of Big Data and Information Engineering,Guizhou University,Guiyang,550025,CHN)

机构地区：[1]贵州师范大学物理与电子科学学院,贵阳550001 [2]贵州大学大数据与信息工程学院,贵阳550025

出　　处：《固体电子学研究与进展》2021年第5期376-381,共6页Research & Progress of SSE

基　　金：贵州省科技计划项目(黔科合基础[2019]1225号);贵州师范大学资助博士科研项目(GZNUD[2018]15号)。

摘　　要：采用磁控溅射方法在Si(111)衬底上分别沉积不同厚度的Mg膜,然后低真空退火处理得到结晶良好的Mg_(2)Si薄膜。一定条件下,Mg膜的最优沉积厚度为2300 nm,对应的Mg_(2)Si(220)衍射峰最强。所有样品均出现256 cm^(-1)附近的拉曼散射峰,该峰归因于Mg_(2)Si的F_(2g)振动模,且该振动模的积分强度随膜厚增加先增加后减小,硅衬底上2300 nm Mg膜退火后的Mg_(2)Si样品的拉曼积分强度最强。The Mg films with different thickness were deposited on Si(111)substrates by magnetron sputtering,and subsequently annealed in a low vacuum,consequently the well-crystallized Mg_(2)Si thin films were prepared.Under certain deposition conditions,the optimal deposition thickness of Mg film is 2300 nm,and the strongest Mg_(2)Si(220)diffraction peak is observed.The strong Raman scattering peak at wave number 256 cm^(-1);in all samples is observed,which is attributed to the F_(2g);phonon mode.The integral strength of 256 cm^(-1);vibration mode increases first and then decreases with the increase of film thickness,and the Raman integral strength corresponding to 2300 nm-Mg sample is the strongest.

关 键 词：Mg_(2)Si 薄膜 硅衬底 X射线衍射 扫描电子显微镜 拉曼 

分 类 号：O484.5[理学—固体物理]