热蒸发法制备金属碲纳米线  

Preparation of Metal Tellurium Nanowires by Thermal Evaporation

作　　者：谢天 张惠敏[1] 李建辉[1,2] 王丽婷 杨春军[1] Xie Tian;Zhang Huimin;Li Jianhui;Wang Liting;Yang Chunjun(School of Materials Science and Engineering,Hebei University of Science and Technology,Shijiazhuang 050000,China;Hebei Key Laboratory of Material Near-Net Forming Technology,Shijiazhuang 050000,China)

机构地区：[1]河北科技大学材料科学与工程学院,河北石家庄050000 [2]河北省材料近净成形技术重点试验室,河北石家庄050000

出　　处：《稀有金属材料与工程》2021年第10期3809-3813,共5页Rare Metal Materials and Engineering

基　　金：河北省创新能力提升计划(20564401D);河北省高等学校科学技术研究项目(ZD2020189)。

摘　　要：于真空管式炉内,以Bi_(2)Te_(3)为蒸发源,在蒸发温度560℃,保温时间2 h的条件下,采用热蒸发法在涂有Au溶胶的石英基片上制备出了大量的碲纳米线。通过XRD、SEM、HRTEM等表征方法对碲纳米线的组织和微观形貌进行了表征与分析。结果表明:制备出的碲纳米线为沿(101)方向取向生长的三方单晶碲纳米线,直径在40~100 nm之间,生长机制符合气体-液体-固体(VLS)生长机制;蒸发源材料和Au溶胶是热蒸发法制备碲纳米线的关键因素。A large number of tellurium nanowires were prepared on quartz substrates coated with Au sol by thermal evaporation method with Bi_(2)Te_(3) as the source in a vacuum tube furnace at 560℃ for 2 h.The microstructures and morphologies of tellurium nanowires were characterized by XRD,SEM and HRTEM.The results show that the prepared tellurium nanowires are trigonal single crystal tellurium nanowires oriented along the(101)direction with the diameter ranging from 40 nm to 100 nm.The growth mechanism conforms to the vapor-liquid-solid(VLS)oriented mechanism.The evaporation source material and Au sol are the key factors for the preparation of tellurium nanowires by thermal evaporation.

关 键 词：热蒸发法 碲纳米线 Bi_(2)Te_(3) Au溶胶 生长机制 

分 类 号：TB383[一般工业技术—材料科学与工程]