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作 者:曹驰 王博[1] 褚应波 邢颍滨 廖雷 戴能利[1] 李进延[1] Cao Chi;Wang Bo;Chu Yingbo;Xing Yingbin;Liao Lei;Dai Nengli;Li Jinyan(Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,Wuhan,Hubei 430074,China;Wuhan Changjin Laser Technology Co.,Ltd.,Wuhan,Hubei 430206,China)
机构地区:[1]华中科技大学武汉国家光电研究中心,湖北武汉430074 [2]武汉长进激光技术有限公司,湖北武汉430206
出 处:《中国激光》2021年第20期206-209,共4页Chinese Journal of Lasers
基 金:国家自然科学基金(11875139)。
摘 要:为了保证掺铒光纤在辐照环境下的工作性能与寿命,采用改进的化学气相沉积(MCVD)方法制备了C波段抗辐照掺铒光纤。在常温下使用^(60)Co辐射源对自研掺铒光纤进行累积剂量为1500 Gy、平均剂量率为0.2 Gy/s的辐照,结果发现,该光纤在980 nm和1550 nm处的辐致损耗(RIA)分别为1.4 dB/m和0.8 dB/m。搭建了掺铒光纤放大器(EDFA)进行增益测试,测试过程中采用输入功率为-20 dBm的1550 nm信号与波长为980 nm的泵浦源。测试结果表明,在100 mW和500 mW泵浦功率下,1550 nm处的辐致增益变化(RIGV)分别为0.8 dB和0.2 dB。Objective With the rapid development of aerospace technology,erbium (Er)-doped fiber amplifier (EDFA)has gradually become the best choice for satellite communication tasks because of its advantages such as high gain,wide bandwidth,and good compactness.However,the Er-doped fiber,a key component of the EDFA,is extremely sensitive to various cosmic rays(gamma rays,etc.).To maintain the performance and life of Er-doped fibers in the irradiated environment,the homemade radiation-resistant Er-doped fiber was developed.Methods Radiation-resistant Er-doped fiber was fabricated using modified chemical vapor deposition(MCVD)technology.The homemade Er-doped fiber was designed with Al-Ge-Ce-La co-doping to strengthen the radiation resistance.Cerium ion-doping technology was used to eliminate color centers due to irradiation.The radiation resistance of the fiber was further improved by adjusting the doping concentration and the ratio of aluminum and germanium.Lanthanum ions were used to reduce the clustering effect of Er ions and improve efficiency.Our fiber’s radiation-induced attenuation(RIA)and radiation-induced gain variation(RIGV)were tested based on Photon Kinetics2500and typical EDFA structure,respectively.Results and Discussions The radiation-resistant Er-doped fiber has the core and cladding diameters of 9and 125μm,respectively.After irradiation by;Co,radiation source with a cumulative and average dose of 1500Gy and 0.2Gy/s,respectively,Fig.1shows that RIA of radiation-resistant Er-doped fiber at 980and 1550nm is 1.4and 0.8dB/m,respectively.The gain-performance test was performed using a typical EDFA structure(Fig.2)with-20dBm signal at pump source of 1550and 980nm.As shown in Fig.3,RIGV at 1550nm is 0.8and 0.2dB at 100and 500mW pumping power,respectively.Conclusions In this study,we prepared a radiation-resistant Er-doped fiber through the MCVD process.RIA at 980and 1550nm is 1.4and 0.8dB/m,respectively.EDFA with-20dBm signal at pump source of 1550and 980nm was built for the gain test.In addition,RIGV at 1550nm i
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