铜铟镓硒太阳能电池性能提升方法  

Methods to Improve Performance of Copper Indium Gallium Selenium Solar Cells

作　　者：丁苏莹 吴子华 谢华清 王元元 栾福园 余思琦 DING Suying;WU Zihua;XIE Huaqing;WANG Yuanyuan;LUAN Fuyuan;YU Siqi(College of Environmental and Materials Engineering,Shanghai Polytechnic University,Shanghai 201209,China)

机构地区：[1]上海第二工业大学工学部环境与材料工程学院,上海201209

出　　处：《材料导报》2021年第S02期1-7,共7页Materials Reports

基　　金：国家自然科学基金重大项目(51590902);上海市人才发展资金资助计划(2018039)。

摘　　要：铜铟镓硒(CIGS)太阳能电池具有转换效率高、生产成本低、不衰退和污染小等优点,是很有前景的新型薄膜太阳能电池,其实验室测试光电转换效率已达23.35%。探究CIGS的光电转化机制和器件性能的提升方法对推动光伏产业的发展具有重要意义。本文综合分析了CIGS的发展历程、原理、结构和提升其性能的主要技术途径。重点介绍了:(1)NaF⁃PDT、KF⁃PDT、RbF⁃PDT和Cs⁃PDT等多种碱金属的后沉积处理技术的发展;(2)采用Zn(O,S)、ZnS、(Zn,Mg)O等无镉缓冲层材料替代CdS缓冲层进行缓冲层结构优化;(3)利用双层或三层Mo背电极来解决Mo表面缺陷问题;(4)在氧化锌中掺杂其他元素(如用铝、氯或硼代替锌的阳离子掺杂)来提高导电性,进而优化窗口层。进而分析了CIGS太阳能电池的光电转化机制和影响因素,以及基于理论优化工艺技术路线方法。最后,讨论了CIGS薄膜太阳能电池相关技术的发展趋势。Copper indium gallium selenium(CIGS)solar cells have the advantages of high conversion efficiency,low production cost,no decay and little pollution.It is a promising new type of thin film solar cells.Its photoelectric conversion efficiency has reached 23.35%in the laboratory.It is of great significance to explore the photoelectric conversion mechanism and device performance improvement methods of CIGS to promote the development of photovoltaic industry.This paper comprehensively analyzes the development process,principle,structure and main technical ways to improve the performance of CIGS.(1)The development of post deposition technologies for various alkali metals,such as NaF⁃PDT,KF⁃PDT,RbF⁃PDT and Cs⁃PDT is mainly introduced;(2)the application of Zn(O,S),ZnS,(Zn,Mg)O in order to optimize the structure of the buffer layer,Cd free buffer layer materials were used to replace CdS buffer layer;(3)double or three layer Mo back electrode was used to solve the problem of Mo surface defects;(4)doping other elements(such as aluminum,chlorine or boron instead of zinc cation doping)to improve the conductivity of ZnO,and then optimize the window layer.Then,the photoelectric conversion mechanism and influencing factors of CIGS solar cells are analyzed,and the process route method based on theory optimization is proposed.Finally,the development trend of CIGS thin film solar cell technology is discussed.

关 键 词：CIGS 碱掺杂 缓冲层 MO 窗口层 

分 类 号：TM914.42[电气工程—电力电子与电力传动]