新型p^(+)深层扩散结构p-in-n硅微条核辐射探测器  

Preparation of a silicon micro-strip detector with a deep p;diffusion structure

作　　者：王秀华[1] 李海霞[1] 李占奎[1] 李春艳[1] 陈翠红[1] 鲁辰桂[1] 李荣华[1] 祖凯玲[1] 王柱生[1] 刘凤琼[1] WANG Xiu-hua;LI Hai-xia;LI Zhan-kui;LI Chun-yan;CHEN Cui-hong;LU Chen-gui;LI Rong-hua;ZU Kai-ling;WANG Zhu-sheng;LIU Feng-qiong(Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China)

机构地区：[1]中国科学院近代物理研究所,兰州730000

出　　处：《兰州大学学报（自然科学版）》2021年第5期683-687,693,共6页Journal of Lanzhou University(Natural Sciences)

基　　金：国家自然科学基金青年基金项目(11505260,12005267)。

摘　　要：设计了一种新型的p+深层扩散结构p-in-n硅微条核辐射探测器,介绍了该探测器的结构、工艺及性能测试结果.探测器为灵敏面积10 mm×10 mm的单面60条探测器,p+注入条宽64μm,栅宽96μm,p+注入条中心下方的p+深层扩散区宽10μm.测试内容包括该探测器的电学特性(反向漏电流、耗尽电压、条间电容、条间电阻)和探测特性(能量分辨、条间串扰).该探测器在45 V全耗尽偏压下,各条的反向漏电流均小于1.3 nA.探测器对241Amα粒子的能量分辨率约为2.6%,相邻条之间的串扰率约为4%.The manufacture and performance characterization of a new micro-strip detector with a deep p;diffusion structure were discussed.The detector was a 10 mm×10 mm n-type bulk silicon device with60 p;implanted strips(64μm wide),which was modified with the addition of a center(relative to the implanted strip)10μm wide and deep p;diffused under the p-strips.The leakage current of each strip was less than 1.3 nA under a full-depletion bias voltage of 45 V.The p;implant strips showed an energy resolution of 2.6%for measurements of;Amαparticles.The level of charge sharing between neighbouring strips was 4%.

关 键 词：硅微条探测器 P 深层扩散结构 能量分辨 条间串扰 

分 类 号：O571.1[理学—粒子物理与原子核物理]