具有卓越光输出效率的GaN基LED模拟研究  

With Excellent Optical Output Efficiency Simulation of GaN Based LED

作　　者：黄晶 陈鹏 Huang Jing;Chen Peng(Shangrao Vocational and Technical College,Shangrao 334109,Jiangxi,P.R.China)

机构地区：[1]上饶职业技术学院,江西上饶334109

出　　处：《灯与照明》2021年第3期44-46,共3页Light & Lighting

摘　　要：通过对GaN基发光二极管(LED)的阻挡层和量子势垒结构的设计研究,发现具有锯齿形的电子阻挡层(EBL)和齿形InGaN/GaN势垒的GaN基发光二极管(LED)的光学性能显著提升。与传统的LED设计相比,由于锯齿形EBL和齿形InGaN/GaN势垒的GaN基LED具有高的电子阻挡势垒、低的空穴注入势垒和均匀的载流子分布,表现出卓越的辐射复合率和光输出功率。Through the design and study of the barrier layer and quantum barrier structure of GaN based on light emitting diodes(LEDs),it found that the electrons with sawtooth shaped the optical properties of GaN based on light emitting diodes(LEDs)with barrier layer(EBL)and toothed InGaN/GaN barrier were significantly improved.Compared with LED design,GaN based on LEDs with serrated EBL and toothed InGaN/GaN barrier have high electron barrier and low hole.The injection barrier and uniform carrier distribution have excellent radiative recombination and optical output power.

关 键 词：发光二极管 辐射复合率 光输出功率 量子阱 

分 类 号：TN312.8[电子电信—物理电子学]