基于GaN HEMT工艺的高功率宽带6 bit数字移相器  

A High-Power Broadband 6 bit Digital Phase Shifter Based on GaN HEMT Technology

作　　者：谢媛媛[1] 吴洪江[1] 赵子润 Xie Yuanyuan;Wu Hongjiang;Zhao Zirun(The 13 thResearch Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2021年第11期847-853,共7页Semiconductor Technology

摘　　要：基于GaN HEMT工艺研制了一款8~12.5 GHz宽带6 bit数字移相器。通过采用优化的宽带拓扑和集总元件,以及在片上集成GaN并行驱动器,提高了移相精度,缩小了芯片的尺寸,减少了控制端数量。测试结果表明,在8~12.5 GHz频带内,全部64个移相状态下,插入损耗小于11 dB,输入回波损耗小于-14 dB,输出回波损耗小于-16 dB,移相均方根误差小于1.8°,幅度变化均方根误差小于0.5 dB。在8 GHz频率下,1 dB压缩点输入功率高达33 dBm。芯片尺寸为5.05 mm×2.00 mm×0.08 mm。An 8-12.5 GHz broadband 6 bit digital phase shifter was developed based on GaN HEMT technology.By using optimized broadband topologies and lumped components,and integrating GaN parallel driver on chip,the phase shift precision is improved,the chip size is reduced,and the number of control terminals is reduced.The measurement results show that at 8-12.5 GHz,at all 64 states conditions,the insertion loss is less than 11 dB,the input return loss is less than-14 dB,the output return loss is less than-16 dB,the RMS phase error is less than 1.8°,the RMS amplitude error is less than 0.5 dB.The input 1 dB compression point is as high as 33 dBm@8 GHz.The die size is 5.05 mm×2.00 mm×0.08 mm.

关 键 词：氮化镓高电子迁移率晶体管(HEMT) 数字移相器 微波单片集成电路(MMIC) 宽带 高功率 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN715