基于分段拟合的SiC MOSFET模型优化方法  

SiC MOSFET Model Optimization Method Based on Piecewise Fitting

作　　者：余秋萍 赵志斌 孙鹏 赵斌 Yu Qiuping;Zhao Zhibin;Sun Peng;Zhao Bin(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Source(NCEPU),Beijing 102206,China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京102206

出　　处：《半导体技术》2021年第11期866-874,共9页Semiconductor Technology

基　　金：国家重点研发计划资助项目(2018YFB0905703)。

摘　　要：提出了一种基于分段拟合的SiC MOSFET模型优化方法。将表征静态特性的核心单元模型优化为分段模型,以使其能同时准确表征高、低栅压下器件的静态特性。同时,在模型分段处进行线性插值以保证模型函数的连续性,基于器件漏源支路元器件参数对拟合数据进行修正以提高模型表征参数的提取准确度。此外,为提高器件的动态模型准确度,增加了栅漏结电容模型函数的分段点,并给出了分段点选择方法。将优化前后栅漏结电容模型函数和静态仿真结果与测试获得的电容曲线、转移曲线和输出曲线进行对比,曲线匹配度较高,表明提出的优化方法显著提高了动态和静态模型的准确性。最后,搭建了SiC MOSFET开关特性测试平台,通过动态开关实验验证了模型优化方法的准确性。A SiC MOSFET model optimization method based on piecewise fitting was proposed.The core unit model for characterizing the static characteristics was optimized into a segmented model so that it could accurately characterize the static characteristics of devices under high and low gate voltages at the same time.Meanwhile,linear interpolation was performed at the model segment location to ensure the continuity of the model function,and the fitting data were corrected based on the component parameters of the drain-source branch of the device to improve the extraction accuracy for characterization parameters of the model.In addition,to improve the accuracy of the dynamic model,the segmentation point of the gate-drain junction capacitance model function was added,and the segmentation point selection method was given.The gate-drain junction capacitance model function and static simulation results before and after optimization were compared with the capacitance curve,transfer curve and output curve obtained from the test.The curve matching degree is relatively high,indicating that the proposed optimization method significantly improves the accuracy of the model.Finally,a SiC MOSFET switching characteristics test platform was built,and the accuracy of the model optimization method proposed was verified through dynamic switching experiments.

关 键 词：分段拟合 模型优化 SiC MOSFET 仿真模型 静态特性 动态特性 

分 类 号：TN386[电子电信—物理电子学]