一种用于5G通信的高稳定双模功率放大器  

A Dual-Mode High-Stability Power Amplifier for 5GCommunication

作　　者：郑立昊 张润曦[1] 石春琦[1] ZHENG Lihao;ZHANG Runxi;SHI Chunqi(Institute of Microelectronic Circuits and Systems,East China Normal University,Shanghai 200241,P.R.China)

机构地区：[1]华东师范大学微电子电路与系统研究所,上海200241

出　　处：《微电子学》2021年第5期620-626,共7页Microelectronics

基　　金：华东师范大学“幸福之花”(智能+)先导研究基金资助项目(44300-19311-542500)。

摘　　要：采用国产40nm CMOS工艺,设计了一种用于5G通信的28GHz双模功率放大器。功率级采用大尺寸晶体管,获得了高饱和输出功率。采用无中心抽头变压器,消除了大尺寸晶体管带来的共模振荡问题。在共源共栅结构的共栅管栅端加入大电阻,提高了共源共栅结构的高频稳定性。采用共栅短接技术,解决了大电阻引起的差模增益恶化问题。在级间匹配网络中采用变容管调节,实现了双模式工作,分别获得了高功率增益和高带宽。电路后仿真结果表明,在高增益模式下,该双模功率放大器获得了20.8dBm的饱和输出功率、24.5%的功率附加效率和28.1dB的功率增益。在高带宽模式下,获得了20.6dBm的饱和输出功率、22.6%的功率附加效率和12.2 GHz的3dB带宽。A dual-mode 28GHz power amplifier(PA)for 5Gapplications was designed in a domestic 40nm CMOS process.The large-sized transistors were used in the power stage to obtain higher saturated output power.The common-mode oscillation problem of power amplifier caused by large size transistors was eliminated by using non-center tapped transformer.A large resistor was utilized at the gate of the common-gate transistor in the cascode topology to improve high frequency stability.The common gate shorting technique was applied to solve the differential gain loss produced by this large resistor.A varactor was used in the inter-stage matching network to realize a dual-mode switching,so high power gain and wide bandwidth were obtained respectively.The post-circuit simulation results showed that,in high gain mode,the dual-mode PA achieved a saturated output power of 20.8 dB,apower added efficiency of 24.5%and a power gain of 28.1dB.In high bandwidth mode,a saturated output power of 20.6dBm,apower added efficiency of 22.6%and a 3dB bandwidth of 12.2GHz were obtained.

关 键 词：功率放大器 无中心抽头变压器 共栅短接 双模 

分 类 号：TN432[电子电信—微电子学与固体电子学]