一种全MOS高精度基准电压源电路  

An All MOS High Precision Voltage Reference Source Circuit

作　　者：徐全坤 李儒章[2,3] 王忠焰 杨潇雨 肖渝 XU Quankun;LI Ruzhang;WANG Zhongyan;YANG Xiaoyu;XIAO Yu(Optoelec.Engineer.College and Int.Semicond.College,Chongqing Univ.of Posts and Telecommun.,Chongqing400065,P.R.China;Science and Technology on Analog Integrated Circuit Laboratory,Chongqing400060,P.R.China;The 24th Research Institute of China Electronics Technology Group Corporation,Chongqing400060,P.R.China)

机构地区：[1]重庆邮电大学光电工程学院/国际半导体学院,重庆400065 [2]模拟集成电路国家重点实验室,重庆400060 [3]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2021年第5期627-631,共5页Microelectronics

基　　金：模拟集成电路国家重点实验室基金资助项目(6142802011503)。

摘　　要：基于0.35μm CMOS工艺,设计了一种高精度基准电压源电路。采用全MOS管实现电路,避免使用大电阻以减小芯片面积。采用新型可变电阻方法,实现了精确补偿。采用两级式基准电压源,提高了电源抑制比。使用Cadence Virtuoso对该基准电压源进行仿真。结果表明,当温度范围为-40℃~125℃时,基准电压为1.146V,温度系数为1.025×10^(-5)℃^(-1)。在27℃时,静态电流为6.57μA,PSRR分别为-96.64dB@100Hz、-93.94dB@10kHz。电源电压在2.9~5V范围变化时,基准电压的线性调整度为0.047%。该电路适用于低功耗、高精度的模拟集成电路。A high precision reference circuit was designed in a 0.35μm CMOS process.All MOSFETs were adopted to avoid resistors,leading to smaller chip area.A new variable resistance method was adopted to realize accurate compensation.A two-stage voltage reference source was adopted to improve the power suppression ratio.The voltage reference source was simulated using Cadence Virtuoso.The results showed that when the temperature ranged from-40℃to 125℃,the reference voltage was 1.146Vand the temperature coefficient was 1.025×10^(-5)℃^(-1).At 27℃,the static current was 6.57μA,and the PSRR was-96.64dB@100Hz [e-mail] linear adjustment degree of the voltage reference was 0.047%at 2.9to 5Vpower supply voltage.This circuit was suitable for analog integrated circuits with low power consumption and high precision.

关 键 词：高精度基准 高电源抑制比 低功耗 预稳压电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]