带软关断和欠压保护的IGBT去饱和过流检测电路  

An IGBT Desaturation and Over-Current Detection Circuit with Soft Turn-off and Under-Voltage Protection

作　　者：朱世蔚 冯全源[1] ZHU Shiwei;FENG Quanyuan(Institute of Microelectronics,Southwest Jiaotong University,Chengdu 611756,P.R.China)

机构地区：[1]西南交通大学微电子研究所,成都611756

出　　处：《微电子学》2021年第5期632-635,共4页Microelectronics

基　　金：国家自然科学基金重大项目(62090012);国家自然科学基金重点项目(62031016,61831017);四川省重点项目(2019YFG0498,2020YFG0282,2020YFG0452,2020YFG0028)。

摘　　要：基于0.4μm标准BCD工艺,设计了一种带有软关断和欠压保护的IGBT去饱和过流检测电路(DESAT)。采用Cadence软件设计并搭建电路,在Hspice软件中进行仿真调试。结果表明,在开始一段时间,欠压锁定电路(UVLO)输出低电平,强制使器件处于关断状态;当UVLO输出高电平之后,DESAT被激活并开始检测集电极电压,一旦检测到集电极电压超过预设6.5V阈值电压,便对器件执行软关断动作,软关断的持续时间为10μs。该检测电路实现了UVLO和DESAT对IGBT的协同保护。A desaturation and over-current detection circuit with soft turn-off and under-voltage protection for IGBT was designed in a 0.4μm standard BCD process.The circuit was designed and built by the Cadence software,and the Hspice software was used to run the simulation and debugging.The results showed that the UVLO output a low level to force the device to be in the off state at the beginning.When the UVLO output a high level,the DESAT was activated and began to detect the collector voltage.Once the collector voltage exceeded the preset threshold voltage of 6.5V,a soft turn-off action was performed in the device.The soft turn-off duration time was 10μs.The detection circuit realized the cooperative protection of IGBT by the UVLO and DESAT.

关 键 词：去饱和过流保护 欠压锁定 绝缘栅双极型晶体管 软关断 

分 类 号：TN433[电子电信—微电子学与固体电子学]