应用于MEMS封装的TSV热可靠性分析  

TSV Thermal Reliability Analysis of Integrated MEMS Package

作　　者：李明浩 王俊强 闫欣雨 李孟委 LI Minghao;WANG Junqiang;YAN Xinyu;LI Mengwei(School of Instrument and Electronics,North University of China,Taiyuan 030051,P.R.China;Nantong Institute of Intelligent Opto-Mechatronics,North University of China,Nantong226000,P.R.China;Academy for Advanced Interdisciplinary Research,North University of China,Taiyuan 030051,P.R.China)

机构地区：[1]中北大学仪器与电子学院,太原030051 [2]中北大学南通智能光机电研究院,南通226000 [3]中北大学前沿交叉学科研究院,太原030051

出　　处：《微电子学》2021年第5期756-760,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61804137);“173”计划基金资助项目(2017JCJQZD00604)。

摘　　要：针对MEMS系统中硅通孔(TSV)的热可靠性,利用快速热处理技术(RTP)进行了温度影响的实验分析。通过有限元分析(FEA)方法得到不同温度热处理后TSV结构的变化趋势,利用RTP对实验样品进行了不同温度的热处理实验,使用扫描电子显微镜和光学轮廓仪表征了样品发生的变化。结果表明,热处理后TSV中Cu柱的凸起程度与表面粗糙度均随热处理温度的升高而增加,多次重复热处理与单次热处理的结果基本相同。该项研究为TSV应用于极端环境下MEMS小型化封装提供了一种解决方案。According to the thermal reliability of through-silicon via(TSV)in micro-electro-mechanical systems(MEMS),the rapid thermal processing technology(RTP)was used to conduct an experimental analysis of the influence of temperature on it.Through the finite element analysis(FEA)method,the change trend of the TSV structure after different temperature heat treatments was obtained.The experimental samples were subjected to heat treatment experiments at different temperatures using RTP.The scanning electron microscope and optical profiler were used to characterize the occurrence of the sample.The results showed that the orientation degree of Cu pillars in TSV after heat treatment and the predetermined surface were increased with the increase of heat treatment temperature.The results of repeated heat treatment and single heat treatment were basically the same.This research provided a solution for MEMS miniaturization package of TSV in extreme environment.

关 键 词：硅通孔 热可靠性 快速热处理技术 有限元分析 

分 类 号：TN406[电子电信—微电子学与固体电子学]