Synthesis and thermoelectric properties of Bi-doped SnSe thin films  

作　　者：Jun Pang Xi Zhang Limeng Shen Jiayin Xu Ya Nie Gang Xiang 庞军;张析;申笠蒙;徐家胤;聂娅;向钢(College of Physics,Sichuan University,Chengdu 610064,China)

机构地区：[1]College of Physics,Sichuan University,Chengdu 610064,China

出　　处：《Chinese Physics B》2021年第11期475-480,共6页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China(Grant No.2017YFB0405702);the National Natural Science Foundation of China(Grant No.51672179).

摘　　要：Bi doped n-type SnSe thin films were prepared by chemical vapor deposition(CVD)and their structure and thermoelectric properties were studied.The x-ray diffraction patterns,x-ray photoelectron spectroscopy,and microscopic images show that the prepared SnSe thin films were composed of pure SnSe crystals.The Seebeck coefficients of the Bi-doped SnSe were greatly improved compared to that of undoped SnSe thin films.Specifically,Sn_(0.99)Bi_(0.01)Se thin film exhibited a Seebeck coefficient of905.8μV·K^(-1) at 600 K,much higher than 285.5μV·K^(-1) of undoped SnSe thin film.Further first-principles calculations reveal that the enhancement of the thermoelectric properties can be explained mainly by the Fermi level lifting and the carrier pockets increasing near the Fermi level due to Bi doping in the SnSe samples.Our results suggest the potentials of the Bi-doped SnSe thin films in thermoelectric applications.

关 键 词：SnSe thin films Bi doping thermoelectric properties Seebeck coefficient 

分 类 号：TB34[一般工业技术—材料科学与工程] TB383.2