Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO_(2)/Ti/Pt device  

作　　者：Jin-Long Jiao Qiu-Hong Gan Shi Cheng Ye Liao Shao-Ying Ke Wei Huang Jian-Yuan Wang Cheng Li Song-Yan Chen 焦金龙;甘秋宏;程实;廖晔;柯少颖;黄巍;汪建元;李成;陈松岩(Department of Physics and Jiujiang Research Institute,Xiamen University,Xiamen 361005,China;College of Physics and Information Engineering,Minnan Normal University,Zhangzhou 363000,China)

机构地区：[1]Department of Physics and Jiujiang Research Institute,Xiamen University,Xiamen 361005,China [2]College of Physics and Information Engineering,Minnan Normal University,Zhangzhou 363000,China

出　　处：《Chinese Physics B》2021年第11期656-660,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.62004087,61474081,and 61534005);the Natural Science Foundation of Fujian Province,China(Grant No.2020J01815);the Natural Science Foundation of Zhangzhou,China(Grant No.ZZ2020J32);the Natural Science Foundation of Jiangxi Province,China(Grant No.20192ACBL20048).

摘　　要：The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current.In the present work,the any-polar resistive switching mode is demonstrated when thin Ti intercalations are introduced into both sides of Pt/HfO_(2)/Pt RRAM device.The role of the Ti intercalations contributes to the fulfillment of the any-polar resistive switching working mechanism,which lies in the filament constructed by the oxygen vacancies and the effective storage of the oxygen ion at both sides of the electrode interface.

关 键 词：FILAMENT memory resistive switching 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]