基于门极电压调制的大功率IGBT过压尖峰抑制  

High-power IGBT Overvoltage Spike Suppression Based on Gate Voltage Modulation

作　　者：冯源 陈昕 宋明轩 张甜 FENG Yuan;CHEN Xin;SONG Ming-xuan;ZHANG Tian(China University of Mining and Technology,Xuzhou 221000,China;不详)

机构地区：[1]中国矿业大学,电气与动力工程学院,江苏徐州221000 [2]绍兴柯桥轨道交通集团有限公司,浙江绍兴312000

出　　处：《电力电子技术》2021年第11期137-140,共4页Power Electronics

基　　金：国家重点研发计划子课题(2016YFC0600804)。

摘　　要：随着现代电力电子技术的不断发展,功率半导体器件的开关速度和功率等级都在进一步提高,其开关电压尖峰成为功率器件在发展过程中必须解决的问题。此处提出一种脉宽调制(PWM)脉冲预调制技术,在驱动电路中增加数字控制模块,根据负载电流的变化及时改变PWM策略,有效抑制关断电压尖峰,使驱动电路更具有通用性。通过实验验证该方法的可行性和实用性。With the continuous development of modern power electronic technology,the switching speed and power level of power semiconductor devices are further improved and its switching voltage spikes have become a problem that must be solved in the development process of power devices.A pulse width modulation(PWM)pulse pre-modulation technology is proposed which adds a digital control module to the drive circuit and changes the PWM strategy in time according to the change of load current which effectively suppresses the turn-off voltage spike and makes the drive circuit more versatile.The feasibility and practicability of this method are verified through experiments.

关 键 词：绝缘栅双极型晶体管 脉宽调制 关断电压尖峰 

分 类 号：TN32[电子电信—物理电子学]