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作 者:王玉新[1] 刘佳慧[1] 宋欣 蔺冬雪 李真 WANG Yuxin;LIU Jiahui;SONG Xin;LIN Dongxue;LI Zhen(College of Physics and Electronic Technology,Liaoning Normal University,Dalian,Liaoning 116029,China)
机构地区:[1]辽宁师范大学物理与电子技术学院,辽宁大连116029
出 处:《光电子.激光》2021年第10期1119-1123,共5页Journal of Optoelectronics·Laser
基 金:辽宁省教育厅科学研究项目(LJ2019006)资助项目。
摘 要:利用溶胶-凝胶法(sol-gel)在玻璃和硅衬底上生长了B掺杂量分别为0 at%、0.5 at%、1.0 at%、2.0 at%、3.0 at%、4.0 at%的ZnO薄膜。采用X射线衍射仪(X-ray diffraction,XRD)、扫描电子显微镜(scanning electron microscope,SEM)、紫外-可见(ultraviolet-visible,UV-Vis)分光光度计等测试手段对薄膜的结构、形貌和光学性能进行了表征。结果表明:所制备的样品在2θ=34.4°左右出现了ZnO晶体的(002)衍射峰,说明制得的样品具有六方纤锌矿结构。并且(002)衍射峰的半高宽先变小后变大,这说明衍射峰的强度是先加强后减弱,证明其晶粒尺寸是先增大后减小。当B掺杂量为3.0 at%时,样品沿(002)方向择优取向生长最为明显,薄膜上的晶粒生长均匀、致密。B掺氧化锌(BZO)薄膜在可见光区的透过率随B^(3+)的掺杂量的增加先增加后减小,并出现轻微蓝移的现象。当掺入B^(3+)的量为3.0 at%时,薄膜结晶质量最好,表面最为均匀、致密,透过率达到90%。Thin films of ZnO doped with B doped with 0 at%,0.5 at%,1.0 at%,2.0 at%,3.0 at%and 4.0 at%were grown on glass and silicon substrates by sol-gel method(sol-gel).The structure,morphology and optical properties of the films were characterized by X-ray diffraction(XRD),scanning electron microscope(SEM)and ultraviolet-visible(UV-Vis)spectrophotometer.The results show that the(002)diffraction peak of ZnO crystal appears at 2θ=34.4°,which indicates that the sample has hexagonal wurtzite structure.The half-height width of the diffraction peak of(002)decreases first and then increases,indicating that the intensity of the diffraction peak increases first and then decreases,and proving that its grain size increases first and then decreases.When the B content is 3.0 at%,the preferred orientation growth of the sample is the most obvious along(002)direction,and the grain growth on the film is uniform and dense.The transmittance of B-doped zinc oxide(BZO)films in the visible region first increases and then decreases with the increase of B;doping,and a slight blue shift appears.When the content of B;is 3.0 at%,the crystalline quality of the film is the best,the surface is the most uniform and dense,and the transmittance reaches 90%.
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