小尺寸应变SOI SiGe异质结双极晶体管  

Novel small-sized SOI SiGe heterojunction bipolar transistor

作　　者：苗乃丹 王冠宇[1] 文剑豪 于明道 周春宇 王巍[1] MIAO Naidan;WANG Guanyu;WEN Jianhao;YU Mingdao;ZHOU Chunyu;WANG Wei(School of Optoelectronic Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,P.R.China;School of Science,Yanshan University,Qinhuangdao 066004,P.R.China)

机构地区：[1]重庆邮电大学光电工程学院,重庆400065 [2]燕山大学理学院,河北秦皇岛066004

出　　处：《重庆邮电大学学报（自然科学版）》2021年第6期955-961,共7页Journal of Chongqing University of Posts and Telecommunications(Natural Science Edition)

基　　金：国家自然科学基金(61704147)。

摘　　要：为了满足通信系统中对核心器件工作频率更高的要求,设计了一种新型的器件结构,有效提高了SiGe异质结双极型晶体管(hetero-junction bipolar transistor,HBT)的频率特性。基于传统的SOI SiGe HBT器件结构,通过减小发射区和集电区的窗口尺寸,并在集电区引入单轴应力,集电区、基区、发射区均实现应变,提高了纵向载流子的迁移率,从而提高器件的电学特性和频率特性,并利用SILVACO TCAD软件对其电学参数和频率参数进行仿真分析。结果表明,当基区Ge组分为梯形分布时,电流增益最大值β_(max)为1062,厄尔利电压V_(A)为186 V,厄尔利电压与电流增益的优值为1.975×10^(5)V,截止频率f_(T)最大值为419 GHz。集电区引入Si_(1-y)Ge_(y)应力源的新型SOI SiGe HBT器件相比于集电区未引入应力源的器件结构,其截止频率f_(T)提高了1.1倍,所设计的新型小尺寸器件具有更优良的频率特性。In order to meet the requirements of higher frequency of core devices in communication system,we design a novel small-sized SOI SiGe hetero-junction bipolar transistor(HBT)device with high-frequency characteristics.Based on the traditional SOI SiGe HBT device structure,both the window size of the emitter region and the collector region are reduced,and uniaxial stress is also introduced in the collector region.Under the act of Si_(1-y)Ge_(y),all the collector region,base region,and emitter region are strained,which is beneficial to improve the performance of the device.The process simulation is then carried out with SILVACO TCAD tools.The results show that,the current gain maximumβ_(max)was 1062,the Earley voltage V_(A)was 186 V,the optimal value of the Earley voltage and current gain was 1.975×10^(5)V and the cutoff frequency f_(T)was 419 GHz when the Ge component in the base was trapezoidal distribution.The proposed small-sized SOI SiGe HBT architecture with additional uniaxial stress in the collector,has a 1.1 times improvement in cutoff frequency f_(T)compared to the collector without any stress.

关 键 词：单轴应变 SOI SiGe HBT 小尺寸 电学特性 频率特性 

分 类 号：TN322.8[电子电信—物理电子学]