ZrTe_(5)的太赫兹辐射研究  

Terahertz radiation study of ZrTe_(5)

作　　者：卢文晖 夏宇 王锋[1] 吕海慧 刘峥 李敏 LU Wenhui;XIA Yu;WANG Feng;LYU Haihui;LIU Zheng;LI Min(School of Optical-Electrical and Computer Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China)

机构地区：[1]上海理工大学光电信息与计算机工程学院,上海200093

出　　处：《光学仪器》2021年第6期52-57,共6页Optical Instruments

基　　金：国家自然科学基金(11727812)。

摘　　要：为了研究层状ZrTe_(5)(五碲化锆)在飞秒脉冲激发下的超快瞬态太赫兹辐射,利用太赫兹时域反射系统对其进行了测试分析。通过分析层状ZrTe_(5)太赫兹电场幅度与飞秒激光泵浦功率及泵浦脉冲偏振关系,获得了层状ZrTe_(5)产生太赫兹辐射的主要机理。同时还对比了相同泵浦条件下层状ZrTe_(5)和本征GaAs(砷化镓)太赫兹辐射强度。研究表明,层状ZrTe_(5)具有带隙结构窄、吸收深度浅、光生电子剩余能量较大、载流子迁移率较高等优势,在太赫兹产生方面比传统半导体具有更好的性能。该研究可为发现高效、高度集成化太赫兹辐射源提供参考。In order to study transient terahertz radiation from layered ZrTe_(5)(zirconium pentatelluride)excited by femtosecond pulses,terahertz time domain system was used to test and analyze the terahertz emission.By analyzing the relationship between terahertz electric field of layered ZrTe_(5) and intensity/polarization of femtosecond laser pulse,it was obtained that the main mechanism of terahertz radiation generation by layered ZrTe_(5).At the same time,the terahertz radiation intensity of layered ZrTe_(5) and intrinsic GaAs(gallium arsenide)under the same pumping conditions was also compared.Studies have shown that the layered ZrTe_(5) has narrow band gap structure,shallow absorption depth,larger residual energy of photogenerated electrons and higher carrier mobility,which has better performance than traditional semiconductors in terms of terahertz generation.The experimental research provides a reference for the discovery of efficient and highly integrated terahertz radiation sources.

关 键 词：光谱学 太赫兹辐射 photo-Dember效应 层状五碲化锆(ZrTe_(5)) 

分 类 号：O433.1[机械工程—光学工程]