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作 者:Zhe Huang Xianbiao Shi Gaoning Zhang Zhengtai Liu Soohyun Cho Zhicheng Jiang Zhonghao Liu Jishan Liu Yichen Yang Wei Xia Weiwei Zhao Yanfeng Guo Dawei Shen 黄喆;石贤彪;张高宁;刘正太;Soohyun Cho;江志诚;刘中灏;刘吉山;杨逸尘;夏威;赵维巍;郭艳峰;沈大伟(Center for Excellence in Superconducting Electronics,State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;School of Physical Science and Technology,Shanghai Tech University,University,Shanghai 201210;State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Shenzhen 518055,China;Flexible Printed Electronics Technology Center,Harbin Institute of Technology,Shenzhen 518055,China;Shanghai Tech Laboratory for Topological Physics,Shanghai Tech University,Shanghai 201210,China)
机构地区:[1]Center for Excellence in Superconducting Electronics,State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]School of Physical Science and Technology,Shanghai Tech University,University,Shanghai 201210 [4]State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Shenzhen 518055,China [5]Flexible Printed Electronics Technology Center,Harbin Institute of Technology,Shenzhen 518055,China [6]Shanghai Tech Laboratory for Topological Physics,Shanghai Tech University,Shanghai 201210,China
出 处:《Chinese Physics Letters》2021年第10期43-48,共6页中国物理快报(英文版)
基 金:Supported by the National Key R&D Program of China (Grant No. 2016YFA0300204);the National Natural Science Foundation of China (Grant Nos. U2032208 and 11874264);the Natural Science Foundation of Shanghai (Grant No. 14ZR1447600);the starting grant of Shanghai Tech University and the Program for Professor of Special Appointment (Shanghai Eastern Scholar);supported by ME~2 project (Grant No. 11227902) from the National Natural Science Foundation of China;supported by the National Natural Science Foundation of China (Grant No. 11974395);the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB33000000);the Center for Materials Genome;the support from Analytical Instrumentation Center,SPST,Shanghai Tech University (Grant No. SPST-AIC10112914)
摘 要:Signatures of topological superconductivity(TSC)in superconducting materials with topological nontrivial states prompt intensive researches recently.Utilizing high-resolution angle-resolved photoemission spectroscopy and first-principles calculations,we demonstrate multiple Dirac fermions and surface states in superconductor BaSn_(3) with a critical transition temperature of about 4.4 K.We predict and then unveil the existence of two pairs of type-Ⅰtopological Dirac fermions residing on the rotational axis.Type-ⅡDirac fermions protected by screw axis are confirmed in the same compound.Further calculation for the spin helical texture of the observed surface states originating from the Dirac fermions gives an opportunity for realization of TSC in one single material.Hosting multiple Dirac fermions and topological surface states,the intrinsic superconductor BaSn_(3) is expected to be a new platform for further investigation of topological quantum materials as well as TSC.
关 键 词:material TOPOLOGICAL DIRAC
分 类 号:TM26[一般工业技术—材料科学与工程]
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