领结型纳米银金属阵列对氮化镓基发光二极管光提取效率的影响  

Effect of Bow Tie Type Silver Metal Array Structure on Light ExtractionEfficiency of GaN-Based Light Emitting Diodes

作　　者：汤桦 李强 张启凡[1,2] 张明殷 张盛楠 胡朋 王旭正 张烨 云峰[2,3] Tang Hua;Li Qiang;Zhang Qifan;Zhang Mingyin;Zhang Shengnan;Hu Peng;Wang Xuzheng;Zhang Ye;Yun Feng(Key Laboratory of Physical Electronics and Devices for Ministry of Education,Xi'an Jiaotong University,Xi'an,Shaanxi 710049,China;School of Electronic Science and Engineering,Xi'an Jiaotong University,Xi'an,Shaanxi 710049,China;Shaanxi Provincial Key Laboratory of Photonics&Information Technology,Xi'an Jiaotong University,Xi'an,Shaanxi 710049,China)

机构地区：[1]西安交通大学电子物理与器件教育部重点实验室,陕西西安710049 [2]西安交通大学电子科学与工程学院,陕西西安710049 [3]西安交通大学陕西省信息光子技术重点实验室,陕西西安710049

出　　处：《光学学报》2021年第21期155-164,共10页Acta Optica Sinica

基　　金：国家重点研发计划(2016YFB0400801);中央高校基本科研业务费(xjj2017011)。

摘　　要：为了提升氮化镓(GaN)基发光二极管(Light Emitting Diode,LED)的发光效率,设计工艺简单且成本低廉的领结型纳米银金属阵列,并将该结构集成于GaN基发光二极管的表面,在不破坏外延结构的情况下通过激发局域表面等离激元效应有针对性地提升不同波段发光二极管的光提取效率。利用时域有限差分法系统地模拟计算不同尺寸的领结型纳米银金属阵列在不同入射波长下对GaN基发光二极管光提取效率的影响,并通过实验进行验证。结果表明,在中心波长分别为370,425,525 nm的LED的表面集成最优尺寸的领结型纳米银金属阵列,其光致发光峰强度相比于无表面结构的LED分别提升71.1%、148.2%和105.9%。In order to improve the luminous efficiency of GaN-based light-emitting diodes(Light Emitting Diode,LED),a bow tie type silver metal array with a simple process and low cost is designed,and the structure is integrated on the surface of the GaN-based light-emitting diode.Without damaging the epitaxial structure,the light extraction efficiency of light-emitting diodes in different wavelength bands can be improved by exciting the local surface plasmon effect.The finite-difference time-domain method is used to systematically simulate and calculate the influence of bow tie type silver metal arrays on the light extraction efficiency of GaN based light-emitting diodes at different incident wavelengths.The results show that the photoluminescence peak intensity of the LED with the central wavelength of 370,425 and 525 nm is increased by 71.1%,148.2%and 105.9%,respectively,compared with that of the LED without surface structure.

关 键 词：光学器件 发光二极管 局域表面等离激元 纳米阵列结构 光提取效率 

分 类 号：O436[机械工程—光学工程]